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Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…
We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500 percent increase in…
Lattices of odd-layered two-dimensional (2D) transition metal dichalcogenides (TMDs) such as WSe2 are non-centrosymmetric, and thus could possess linear piezoelectricity that is attractive for applications such as nanoelectromechanical…
Recent discoveries of the photoresponse of molybdenum disulfide (MoS2) have shown the considerable potential of these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among the various types of…
Quasi-2D metal halide perovskites have emerged as a promising material for photodetection due to excellent optoelectronic properties, simple synthesis, and robust stability. Albeit, developing high-performance photodetectors based on…
Graphene photodetectors offer ultrafast response and broadband operation, but their responsivity is typically limited by rapid hot-carrier cooling, leading to a trade-off between sensitivity and speed. Here, we demonstrate that modifying…
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device…
Compared to regular cameras, Dynamic Vision Sensors or Event Cameras can output compact visual data based on a change in the intensity in each pixel location asynchronously. In this paper, we study the application of current image-based…
The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulphide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to…
The shift current effect, in materials lacking inversion symmetry, may potentially allow the performance of photovoltaics to surpass the Shockley-Queisser limit for traditional p-n junction-based photovoltaics. Although the shift-current…
Moving towards autonomy, unmanned vehicles rely heavily on state-of-the-art collision avoidance systems (CAS). However, the detection of obstacles especially during night-time is still a challenging task since the lighting conditions are…
We present an experimental and theoretical study of the electronic band structure of ReS2 and ReSe2 at high hydrostatic pressures. The experiments are performed by photoreflectance spectroscopy and are analyzed in terms of ab initio…
A new photoelectric phenomenon, the in-plane photoelectric (IPPE) effect, has been recently discovered at terahertz (THz) frequencies in a GaAs/Al$_x$Ga$_{1-x}$As heterostructure with a two-dimensional (2D) electron gas (W. Michailow et…
Transition metal dichalcogenides (TMDs) are layered materials that have a semiconducting phase with many advantageous optoelectronic properties, including tightly bound excitons and spin-valley locking. In Tungsten-based TMDs, spin and…
Over the past few decades, thin film optoelectronic devices based on transition metal dichalcogenides (TMDs) have made significant progress. However, the sensitivity of the exciton states to environmental change presents challenges for…
Understanding how optical excitation couples with polarization and interfacial electrostatics in van der Waals (vdW) ferroelectrics (FEs) is essential for the development of light-programmable nanoelectronic and optoelectronic devices.…
Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability…
Optoelectronic functionalities of photodection and light harnessing rely on the band-to-band excitation of semiconductors, thus the spectral response of the devices is dictated and limited by their bandgap. A novel approach, free from this…
Vertical and lateral heterostructures of van der Waals materials provide tremendous flexibility for band structure engineering. Since electronic bands are sensitively affected by defects, strain, and interlayer coupling, the edge and…
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer…