Related papers: Atomistic study of dislocation formation during Ge…
Al-induced layer exchange crystallization of amorphous Ge thin films has been demonstrated recently, and provides a suitable system to characterize, model and control Ge crystal growth on non-crystalline substrates. Direct observation of Ge…
Surface interactions can cause freely suspended thin liquid crystalline films to form phases different from the bulk material, but it is not known what happens at the surface of thick films. Edge dislocations can be used as a marker for the…
It has been shown in experiments that self-climb of prismatic dislocation loops by pipe diffusion plays important roles in their dynamical behaviors, e.g., coarsening of prismatic loops upon annealing, as well as the physical and mechanical…
In the paper, the processes occurring during low-temperature growth of non-hydrogenated amorphous Si and polycrystalline Si films on multilayer Si$_3$N$_4$/SiO$_2$/c-Si substrates from molecular beams under conditions of ultrahigh vacuum…
The dynamics of dislocations is reported to exhibit glassy properties. We study numerically various versions of 2d edge dislocation systems in the absence of externally applied stress. Two types of glassy behavior are identified: (i)…
Dislocation velocities and mobilities are studied by Molecular Dynamics simulations for edge and screw dislocations in pure aluminum and nickel, and edge dislocations in Al-2.5%Mg and Al-5.0%Mg random substitutional alloys using EAM…
Simulations of SiC crystal growth using molecular dynamics (MD) have become popular in recent years. They, however, simulate very fast deposition rates, to reduce computational costs. Therefore, they are more akin to surface sputtering,…
During plastic deformation of metals and alloys, dislocations self-organise in cells, which subsequently continuously decrease in size. How and when these processes take place has remained elusive, because observations of the structural…
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC…
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the…
We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si)…
The experimental x-ray diffraction patterns of a Si$_{0.4}$Ge$_{0.6}$/Si(001) epitaxial film with a low density of misfit dislocations are modeled by the Monte Carlo method. It is shown that an inhomogeneous distribution of 60$^\circ$…
The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600C. As a result of the short-term annealing at…
Atomistic simulations are used to study linear complexion formation at dislocations in a body-centered cubic Fe-Ni alloy. Driven by Ni segregation, precipitation of the metastable B2-FeNi and stable L10-FeNi phases occurs along the…
The morphological evolution and the effect of growth temperature on size, orientation and composition of molecular beam epitaxy grown Ge-Si islands on Si(5 5 12) surfaces have been investigated in the temperature range from room temperature…
In this work we investigate influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also…
The growth of up to 10 monolayer-thick Fe films on a Au(001) surface was investigated during deposition at room temperature and during annealing using low-energy electron diffraction and x-ray photoemission spectroscopy as well as locally…
Jogs, atomic-scale steps on dislocations, play an important role in crystal plasticity, yet they are often ignored in discrete dislocation dynamics (DDD) simulations due to their small sizes. While jogs on screw dislocations are known to…
Computer simulations and scaling theory are used to investigate the damping of oscillations during epitaxial growth on high-symmetry surfaces. The crossover from smooth to rough growth takes place after the deposition of (D/F)^\delta…