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The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate voltage. This property is robust even with respect to…

Mesoscale and Nanoscale Physics · Physics 2014-11-11 S. A. Fedorov , A. E. Korolkov , N. M. Chtchelkatchev , O. G. Udalov , I. S. Beloborodov

A theoretical model of high-T_c Josephson Field Effect Transistors (JoFETs) based on a Ginzburg-Landau free energy expression whose parameters are field- and spatially- dependent is developed. This model is used to explain experimental data…

supr-con · Physics 2009-10-30 J. J. Betouras , R. Joynt , Z. -W. Dong , T. Venkatesan , P. Hadley

We present a phenomenological model of periodic ferroelectric-superconductor (FE-S) heterostructures containing two alternating ferroelectric and superconducting layers. The interaction at the FE-S contacts is described as a coupling of the…

Statistical Mechanics · Physics 2007-05-23 N. Pavlenko , F. Schwabl

We report the fabrication and testing, at 4.2 K, of an SISFS device, where S, F, and I denote a superconductor (Nb), a ferromagnetic material (permalloy), and an insulator (AlOx), respectively. The F layer covers about one half of the top…

Superconductivity · Physics 2023-07-06 Ivan Nevirkovets , Oleg Mukhanov

In semiconductor electronics, the field-effect refers to the control of electrical conductivity in nanoscale devices, which underpins the field-effect transistor, one of the cornerstones of present-day semiconductor technology. The effect…

Mesoscale and Nanoscale Physics · Physics 2021-06-09 Ilia Golokolenov , Andrew Guthrie , Sergey Kafanov , Yuri Pashkin , Viktor Tsepelin

The thermal conductivity of the iron-based superconductor FeSe was measured at temperatures down to 50 mK in magnetic fields up to 17 T. In zero magnetic field, the electronic residual linear term in the T = 0 limit, \kappa_0/T, is…

Engineering heterostructures with various types of quantum materials can provide an intriguing playground for studying exotic physics induced by the proximity effect. Here, we report the successful synthesis of iron-based superconductor…

Tetragonal FeSe is a superconductor with a transition temperature Tc of 8 K and shows a huge enhancement of Tc with applying pressure. Tetragonal FeTe has a structure very analogous to superconducting FeSe, but does not show superconducting…

Superconductivity · Physics 2009-08-09 Y. Mizuguchi , F. Tomioka , S. Tsuda , T. Yamaguchi , Y. Takano

Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…

Mesoscale and Nanoscale Physics · Physics 2020-02-12 A. Kringhøj , T. W. Larsen , B. van Heck , D. Sabonis , O. Erlandsson , I. Petkovic , D. I. Pikulin , P. Krogstrup , K. D. Petersson , C. M. Marcus

Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that…

Mesoscale and Nanoscale Physics · Physics 2012-01-19 Sungjae Cho , Nicholas P. Butch , Johnpierre Paglione , Michael S. Fuhrer

The discovery of high-temperature superconductivity in Fe-based compounds [1,2] has triggered numerous investigations on the interplay between superconductivity and magnetism [3] and, more recently, on the enhancement of transition…

Superconductivity and ferromagnetism are antagonistic forms of order, and rarely coexist. Many interesting new phenomena occur, however, in hybrid superconducting/ferromagnetic systems. For example, a Josephson junction containing a…

We report experimental results on characteristics of SFIFS junctions and multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS…

Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required…

Since its discovery, iron-based superconductivity has been known to develop near an antiferromagnetic order, but this paradigm fails in the iron chalcogenide FeSe, whose single-layer version holds the record for the highest superconducting…

Strongly Correlated Electrons · Physics 2020-06-22 Wen-Jun Hu , Hsin-Hua Lai , Shou-Shu Gong , Rong Yu , Elbio Dagotto , Qimiao Si

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2.…

We present the results of paramagnetic LDA band structure calculations: band dispersions, densities of states and Fermi surfaces, for the new iron based high-temperature superconductor LiOHFeSe. Main structural motif providing bands in the…

Superconductivity · Physics 2015-07-22 I. A. Nekrasov , M. V. Sadovskii

Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer…

Mesoscale and Nanoscale Physics · Physics 2014-09-04 F. Giazotto , J. W. A. Robinson , J. S. Moodera , F. S. Bergeret

Fermi systems in the crossover regime between weakly coupled Bardeen-Cooper-Schrieffer (BCS) and strongly coupled Bose-Einstein-condensate (BEC) limits are among the most fascinating objects to study the behavior of an assembly of strongly…

A series of layered CeO$_{1-x}$F$_x$FeAs compounds with x=0 to 0.20 are synthesized by solid state reaction method. Similar to the LaOFeAs, the pure CeOFeAs shows a strong resistivity anomaly near 145 K, which was ascribed to the…

Superconductivity · Physics 2008-06-20 G. F. Chen , Z. Li , D. Wu , G. Li , W. Z. Hu , J. Dong , P. Zheng , J. L. Luo , N. L. Wang
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