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Composite multiferroics consisting of a ferroelectric material interfaced with a ferromagnetic material can function above room temperature and exhibit improved magnetoelectric (ME) coupling compared to single-phase multiferroic materials,…
One-dimensional graphene superlattice subjected to strong Kronig-Penney (KP) potential is promising for achieving electron lensing effect, while previous studies utilizing the modulated dielectric gates can only yield a moderate, spatially…
Doping of the graphene lattice with transition metal atoms resulting in high magnetic anisotropy energy (MAE) is an important goal of materials research owing to its potential application in spintronics. In this article, by using…
Using micromagnetic simulations, we study the interplay between strongly voltage-controlled magnetic anisotropy (VCMA), $\Delta K = \pm$200 kJ/m$^3$, and gate width, $w=$ 10--400 nm, in voltage-gated W/CoFeB/MgO based nano-constriction spin…
A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of…
The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic…
A finite Schottky barrier and large contact resistance between monolayer MoS2 and electrodes are the major bottlenecks in developing high-performance field-effect transistors (FETs) that hinder the study of intrinsic quantum behaviors such…
Friction-induced energy dissipation impedes the performance of nanoscale devices during their relative motion. Nevertheless, an ingeniously designed structure which utilizes graphene topping can tune the friction force signal by inducing…
The stability, electronic and optical properties of single-walled carbon nanotubes (CNTs) and graphene noncovalently functionalized with free-base tetraphenylporphyrin (TPP) molecules is addressed by density functional theory calculations,…
It is demonstrated that the electric dipole layer due to the overlapping of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in…
Van der Waals heterostructures offer a versatile platform for tailoring electrical, magnetic, optical, and spin transport properties of materials through proximity effects. Notably, hexagonal transition metal dichalcogenides have been shown…
We report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance…
Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance…
Antiferromagnets are promising materials for future spintronic applications due to their unique properties including zero stray fields, robustness versus external magnetic fields and ultrafast dynamics, which have attracted extensive…
Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by…
We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was…
In this work, we utilize voltage controlled magnetic anisotropy (VCMA) to manipulate magnetic skyrmions that are fixed in space. Memory devices based on this strategy can potentially be of smaller footprint and better energy efficiency than…
We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
In the present work, first-principles calculations based on the density functional theory (DFT), GW approximation and Bethe-Salpeter equation (BSE) are performed to study the electronic and optical properties of penta-graphene (PG)…