Related papers: Termination-Dependent Resistive Switching in SrTiO…
To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…
Modulation of the grain boundary properties in thermoelectric materials that have thermally activated electrical conductivity is crucial in order to achieve high performance at low temperatures. In this work, we show directly that the…
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…
A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…
We investigate energetic stability and dissociation dynamics of water adsorption at the LaAlO3 surface of the n-type LaAlO3/SrTiO3 (LAO/STO) interface and its effect on electronic properties of the interface by carrying out first-principles…
The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…
The control and manipulation of filamentary resistive switching (FRS) is essential for practical applications in fields like non-volatile memories and neuromorphic computing. However, key aspects of the dynamics of conductive filament…
Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and…
Understanding band alignment and charge transfer at complex oxide interfaces is critical to tailoring and utilizing their diverse functionality. Towards this goal, we design and experimentally validate both Ohmic- and Schottky-like charge…
SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. New oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using a three-terminal…
Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and rupture. We investigate the effect of Ag nanoparticles (AgNPs)…
Modern computers perform pre-defined operations using static memory components, whereas biological systems learn through inherently dynamic, time-dependent processes in synapses and neurons. The biological learning process also relies on…
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary…
Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, oxygen vacancies…
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we…
Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction…
Transition metal oxides (TMOs) are complex electronic systems which exhibit a multitude of collective phenomena. Two archetypal examples are VO2 and NdNiO3, which undergo a metal-insulator phase-transition (MIT), the origin of which is…
Functional oxides and hybrid structures with interfacial spin orbit coupling and the Rashba-Edelsterin effect (REE) are promising materials systems for thermal tolerance spintronic device applications. Here, we demonstrate efficient…