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The Last Level Cache (LLC) is the processor's critical bridge between on-chip and off-chip memory levels - optimized for high density, high bandwidth, and low operation energy. To date, high-density (HD) SRAM has been the conventional…

In this paper, we propose a novel memory-centric scheme based on CMOS SRAM for acceleration of data intensive applications. Our proposal aims at dynamically increasing the on-chip memory storage capacity of SRAM arrays on-demand. The…

This work presents a novel monolithic 3D (M3D) FPGA architecture that leverages stackable back-end-of-line (BEOL) transistors to implement configuration memory and pass gates, significantly improving area, latency, and power efficiency. By…

Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor…

3D DRAM has emerged as a promising approach for continued density scaling, but its viability is limited by routing and hybrid bonding constraints to periphery, which may degrade sensing margin, latency, and array efficiency. With device…

The quest for energy-efficient, scalable neuromorphic computing has elevated compute-in-memory (CIM) architectures to the forefront of hardware innovation. While memristive memories have been extensively explored for synaptic implementation…

Deep learning hardware designs have been bottlenecked by conventional memories such as SRAM due to density, leakage and parallel computing challenges. Resistive devices can address the density and volatility issues, but have been limited by…

Memory management is necessary with the increasing number of multi-connected AI devices and data bandwidth issues. For this purpose, high-speed multi-port memory is used. The traditional multi-port memory solutions are hard-bounded to a…

Over the last three decades, innovations in the memory subsystem were primarily targeted at overcoming the data movement bottleneck. In this paper, we focus on a specific market trend in memory technology: 3D-stacked memory and caches. We…

With the rapid growth of deep neural networks (DNNs), compute-in-memory (CIM) has emerged as a promising energy-efficient paradigm for accelerating multiply-and-accumulate (MAC) operations. Yet, current CIM architectures are largely limited…

The emerging paradigm of abundant-data computing requires real-time analytics on enormous quantities of data collected by a mushrooming network of sensors. Todays computing technology, however, cannot scale to satisfy such big data…

Moore's law has long served the semiconductor industry as the driving force for producing ever-advancing electronics technologies. However, given the economic implications and technological challenges associated with the present…

AI chips commonly employ SRAM memory as buffers for their reliability and speed, which contribute to high performance. However, SRAM is expensive and demands significant area and energy consumption. Previous studies have explored replacing…

Amorphous oxide semiconductors (AOSs) have recently gained attention as a promising channel material of back-end-of-line (BEOL)-compatible transistors for monolithic three-dimensional (3D) integrations. However, the degradation in device…

To overcome the well-known memory bottleneck of AI chips, 3D stacked architectures that employ advanced packaging technology with high-density through-silicon vias (TSVs) pins have proven to be a promising solution. The 3D-stacked AI chip…

Emerging nano-scale programmable Resistive-RAM (RRAM) has been identified as a promising technology for implementing brain-inspired computing hardware. Several neural network architectures, that essentially involve computation of scalar…

This work introduces a GPU storage expansion solution utilizing CXL, featuring a novel GPU system design with multiple CXL root ports for integrating diverse storage media (DRAMs and/or SSDs). We developed and siliconized a custom CXL…

The rapid growth of deep neural network (DNN) workloads has significantly increased the demand for large-capacity on-chip SRAM in machine learning (ML) applications, with SRAM arrays now occupying a substantial fraction of the total die…

The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as static random-access memory (SRAM). However, the advantage of…

The growing prevalence of data-intensive workloads, such as artificial intelligence (AI), machine learning (ML), high-performance computing (HPC), in-memory databases, and real-time analytics, has exposed limitations in conventional memory…