Related papers: Simplified Aluminum Nitride Processing for Low-Los…
In the last decades, Bulk-Acoustic-Wave (BAW) filters have been essential components of 1G-to-4G radios. These devices rely on the high electromechanical coupling coefficient (kt2~7%), attained by Aluminum Nitride (AlN)…
Niobium nitride (NbN) is a metallic superconductor that is widely used for superconducting electronics due to its high transition temperature ($T_c$) and kinetic inductance. Processing-induced damage negatively affects the performance of…
We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low…
Electro-optic modulators are fundamental components in atomic physics experiments, including trapped-ion systems used in precision metrology and quantum computing. To enable scalable photonic integration, we design and analyze an integrated…
High quality factor optical microcavities have been employed in a variety of material systems to enhance nonlinear optical interactions. While single-crystalline aluminum nitride microresonators have recently emerged as a low loss platform…
Atomic layer deposition (ALD), a layer-by-layer controlled method to synthesize ultrathin materials, provides various merits over other techniques such as precise thickness control, large area scalability and excellent conformality. Here we…
Rapid decline in fossil fuel energy necessitates the immediate need for renewable energy resources. Here, we report a previously unexplored class of nitrides AMN$_2$ keeping renewable energy applications in mind. Using a detailed structure…
Nanomechanical resonators with high quality factors (\Qm{}) enable mechanics-based quantum technologies, in particular quantum sensing and quantum transduction. High-\Qm{} nanomechanical resonators in the kHz to MHz frequency range can be…
The availability of large-area substrates imposes an important constraint on the technological and commercial realization of devices made of layered materials. Aluminum nitride films on silicon are shown to be promising candidate materials…
We demonstrate second order optical nonlinearity in aluminum nitride on insulator substrates. Using sputter-deposited aluminum nitride thin films we realize nanophotonic waveguides coupled to micro-ring resonators that simultaneously…
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…
This abstract presents an aluminum nitride (AlN) piezoelectric actuator for tuning optical resonance modes of silicon nitride photonic resonators. The AlN actuator is fabricated on top of a thick silicon dioxide cladding that encapsulates…
High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion (GVD)…
Integrated nonlinear photonic circuits received rapid development in recent years, providing all-optical functionalities enabled by cavity-enhanced photon-photon interaction for classical and quantum applications. A high-efficiency…
Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades: from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in…
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN…
Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the…
Nanoimprint lithography (NIL) is an attractive nonconventional lithographic technique in the fabrication of superconducting nanowires for superconducting nanowire single-photon detectors (SNSPDs) with large effective detection areas or…
In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented,…
High-quality ultra-thin films of niobium nitride (NbN) are developed by plasma-enhanced atomic layer deposition (PEALD) technique. Superconducting nanowire single-photon detectors (SNSPDs) patterned from this material exhibit high switching…