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The evolution of electronic structure of graphene nanoribbons (GNRs) as a function of the number of layers stacked together is investigated using \textit{ab initio} density functional theory (DFT) including interlayer van der Waals…

Materials Science · Physics 2011-10-28 Neerav Kharche , Yu Zhou , Kevin P. O'Brien , Swastik Kar , Saroj K. Nayak

Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as…

We study the electronic properties of the heterobilayer of vanadium and iron oxychlorides, VOCl and FeOCl, two layered air stable van der Waals insulating oxides with different types of antiferromagnetic order in bulk: VOCl monolayers are…

Mesoscale and Nanoscale Physics · Physics 2021-04-19 F. Mahrouche , K. Rezouali , Z. C. Wang , J. Fernández-Rossier , A. Molina-Sánchez

Van der Waals heterostructures comprise a new class of artificial materials formed by stacking atomically-thin planar crystals. Here, we demonstrate band structure engineering of a van der Waals heterostructure composed of a monolayer…

Mesoscale and Nanoscale Physics · Physics 2013-05-22 B. Hunt , J. D. Sanchez-Yamagishi , A. F. Young , K. Watanabe , T. Taniguchi , P. Moon , M. Koshino , P. Jarillo-Herrero , R. C. Ashoori

Kagome lattice bilayers offer unique opportunities for engineering electronic properties through interlayer stacking and strain. We report a comprehensive first-principles study of Pd$_3$O$_2$Cl$_2$ kagome bilayers, examining four stacking…

Materials Science · Physics 2025-12-22 Ziao Yang , Chidiebere I. Nwaogbo

Stacking and twisting van der Waals materials provide a powerful tool to design quantum matter and engineer electron correlation. For instance, monolayers of 1T- and 1H-TaS2 are Mott insulating and metallic (also superconducting),…

Materials Science · Physics 2025-02-14 Hyeonhu Bae , Roser Valenti , Igor I. Mazin , Binghai Yan

Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning…

van der Waals stacking of two-dimensional (2D) materials offers a powerful platform for engineering material interfaces with tailored electronic and optical properties. While most van der Waals multilayers have featured inorganic…

In this article we review recent work on van der Waals (vdW) systems in which at least one of the components has strong spin-orbit coupling. We focus on a selection of vdW heterostructures to exemplify the type of interesting electronic…

Mesoscale and Nanoscale Physics · Physics 2020-06-04 Enrico Rossi , Christopher Triola

In van der Waals heterostructures of two-dimensional transition-metal dichalcogenides (2D TMDCs) electron and hole states are spatially localized in different layers forming long-lived interlayer excitons. Here, we have investigated, from…

Materials Science · Physics 2020-11-03 Muhammad S. Ramzan , Jens Kunstmann , Agnieszka B. Kuc

Electronic charge rearrangement between components of a heterostructure is the fundamental principle to reach the electronic ground state. It is acknowledged that the density of states distribution of the components governs the amount of…

In an ideal InAs/GaSb bilayer of appropriate dimension in-plane electron and hole bands overlap and hybridize, and a topologically non-trivial, or quantum spin Hall (QSH) insulator, phase is predicted to exist. The in-plane dispersion's…

We demonstrate advantages of samples made by mechanical stacking of exfoliated van der Waals materials for controlling the topological surface state of a 3-dimensional topological insulator (TI) via interaction with an adjacent magnet…

We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample…

Mesoscale and Nanoscale Physics · Physics 2011-06-16 C. Rossler , T. Feil , P. Mensch , T. Ihn , K. Ensslin , D. Schuh , W. Wegscheider

Finding novel atomically-thin heterostructures and understanding their characteristic properties are critical for developing better nanoscale optoelectronic devices. In this study, we investigate the electronic and optical properties of…

Materials Science · Physics 2016-03-23 E. Torun , H. Sahin , F. M. Peeters

Using first-principles calculations, we study the structural and electronic properties of the bilayer SnS/graphene, bilayer SnS/bilayer graphene (AA-stacked), bilayer SnS/bilayer graphene (AB-stacked) and monolayer SnS/graphene/monolayer…

Materials Science · Physics 2023-01-24 M. R. Ebrahimi , T. Vazifehshenas

We use first-principles calculations to show that van der Waals (vdW) heterostructures consisting of few-layer Bi$_2$Se$_3$ and PtSe$_2$ exhibit electronic and spintronics properties that can be tuned by varying the constituent layers.…

Mesoscale and Nanoscale Physics · Physics 2020-12-15 Shahid Sattar , J. Andreas Larsson

Heterostructures formed between two different van der Waals materials enable interactions and functionalities absent in each component. In this work we show that vicinity to an atomically thin WSe$_2$ sheet dramatically impacts the energies…

Mesoscale and Nanoscale Physics · Physics 2019-11-06 Ya-Wen Chuang , Jing Li , Hailong Fu , Kenji Watanabe , Takashi Taniguchi , Jun Zhu

The properties of Van der Waals heterostructures are determined by the twist angle and the interface between adjacent layers as well as their polytype and stacking. Here we describe the use of spectroscopic Low Energy Electron Microscopy…

We identify qualitative trends in the stacking sequence dependence of carrier-carrier interaction phenomena in multilayer graphene. Our theory is based on a new approach which explicitly exhibits the important role in interaction phenomena…

Mesoscale and Nanoscale Physics · Physics 2016-09-30 Yunsu Jang , E. H. Hwang , A. H. MacDonald , Hongki Min