Related papers: XHEMTs on Ultrawide Bandgap Single-Crystal AlN Sub…

The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…

Designing nanoscale electronic devices such as the currently manufactured nanoribbon field-effect transistors (NRFETs) requires advanced modeling tools capturing all relevant quantum mechanical effects. State-of-the-art approaches combine…

As data-centric computing advances, energy-efficient interconnects are increasingly critical for AI-driven systems. Traditional metal conductors face severe limitations at nanoscale due to increased resistivity from surface scattering. In…

We demonstrate high-frequency (> 3 GHz), high quality factor radio frequency (RF) resonators in unreleased thin film gallium nitride (GaN) on sapphire and silicon carbide substrates by exploiting acoustic guided mode (Lamb wave) resonances.…

AlGaN plays a vital role in hetero-structure high electron mobility transistor by employing a two-dimensional electron gas and as electron blocking layer in the multi quantum well light emitting diodes. Nevertheless, the incorporation of Al…

We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and…

The spectrum of two-dimensional (2D) materials beyond graphene offers a remarkable platform to study new phenomena in condensed matter physics. Among these materials, layered hexagonal boron nitride (hBN), with its wide bandgap energy…

Gallium nitride (GaN) is a typical wide-bandgap semiconductor with a critical role in a wide range of electronic applications. Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a device when its…

Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…

Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to…

The Mg2X (X=Si, Ge, Sn) based alloy is an eco-friendly thermoelectric material for mid-temperature applications. The Mg2Si1-xSnx and Mg2Ge1-xSnx alloys can be phase-separated into Si(Ge)- and Sn-rich phases during material synthesis,…

The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire…

We present a method to obtain quantitative profiles of surface state charge density and monitor its dynamics under various stress conditions in high electron mobility transistor (HEMT) devices. The method employs an optical spectroscopy of…

We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and…

Ohmic contacts to high (>70\%) Al content n-type Al$_x$Ga$_{1-x}$N ultra-wide bandgap semiconductor layers in nitride electronic and photonic devices are typically fabricated by a lift-off process and high temperature ($>700^\circ$C)…

The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach…

Aluminum nitride (AlN)-on-insulator has emerged as a promising platform for the realization of linear and non-linear integrated photonic circuits. In order to efficiently route optical signals on-chip, precise control over the interaction…

This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics…

As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the…

This paper aims to give a short overview on some relevant processing issues existing in SiC and GaN power devices technology. The main focus is put on the importance of the channel mobility in transistors, which is one of the keys to reduce…