Related papers: Characterizing Spin-Orbit Torques by Tensorial Spi…
The spin Hall effect is a phenomenon that an electric field induces a spin Hall current. In this Letter, we examine the inverse effect that, in a ferromagnetic conductor, a charge Hall current is induced by a spin motive force, or a…
Emerging magnetic fields related to the presence of topologically protected spin textures such as skyrmions are expected to give rise to additional, topology-related contributions to the Hall effect. In order to doubtlessly identify this…
The spin Hall magnetoresistance (SMR) phenomenon includes the fundamental physics of spin current, and originates from spin accumulation at an interface owing to the spin Hall effect. Although bilayers are the simplest structure exhibiting…
Due to spin-orbit coupling (SOC), crucial for the quantum spin Hall (QSH) effect, a quantized spin-Hall conductivity has not yet been reported in QSH insulators and other realistic materials. Here, we tackle this challenge by predicting…
Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties, including…
The ultrafast control of magnetisation states in magnetically ordered systems is a key technological challenge for developing memory devices operable at picosecond timescales or terahertz (THz) frequencies. Despite significant efforts in…
Realization of noncentrosymmetric magnetic Weyl metals is expected to exhibit anomalous transport properties stemming from the interplay of unusual bulk electronic topology and magnetism. Here, we present spin-valve-like magnetoresistance…
Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal / ferromagnet (HM/FM) bilayer systems. We observe the USMR in the Pt/{\alpha}-Fe2O3 bilayers where the {\alpha}-Fe2O3 is an antiferromagnetic…
Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin-orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of…
The surface of a topological insulator hosts a very special form of a quasi-two dimensional metallic system when it is embedded in a topologically trivial medium like the vacuum. The electronic properties of this unusual 2D metal are…
The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques…
Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low…
We measure magnetic field dependence of the Hall angle in a metallic ferromagnetic nanomagnet with stable local magnetic moments where the adopted mechanisms of Hall effect predict linear plus a constant dependence on the external field…
Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, spin current can be also created by a temperature gradient, which is…
The intrinsic spin Hall effect plays an important role in spintronics applications, such as spin-orbit torque-based memory. The bulk space group symmetry determines the form of the bulk spin current conductivity tensor. This paper considers…
The spin Hall effect creates a spin current in response to a charge current in a material that has strong spin-orbit coupling. The size of the spin Hall effect in many materials is disputed, requiring independent measurements of the effect.…
Spin Hall effect and its inverse provide essential means to convert charge to spin currents and vice versa, which serve as a primary function for spintronic phenomena such as the spin-torque ferromagnetic resonance and the spin Seebeck…
Measuring the magnetoresistance (MR) of ultraclean {\it GaAs} two-dimensional holes in a large $r_s$ range of 20-50, two striking behaviors in relation to the spin-orbit coupling (SOC) emerge in response to strong electron-electron…
We measure spin-orbit torque generated by exfoliated layers of the low-symmetry semi-metal ZrTe$_3$ using the spin-torque ferromagnetic resonance (ST-FMR) technique. When the ZrTe$_3$ has a thickness greater than about 10 nm, artifacts due…
Traditional view of the anomalous Hall effect~(AHE) in ferromagnets is that it arises from the magnetization perpendicular to the measurement plane and that there is a linear dependence on the latter. Underlying such a view is the thinking…