Related papers: A new angle on stacking faults: Overcoming the edg…
With the rapid growth in the semiconductor industry, it is becoming critical to detect and classify increasingly smaller patterned defects. Recently machine learning, including deep learning, has come to aid in this endeavor in a big way.…
Observing the individual building blocks of matter is one of the primary goals of microscopy. The invention of the scanning tunneling microscope [1] revolutionized experimental surface science in that atomic-scale features on a solid-state…
The technique known as 4D-STEM has recently emerged as a powerful tool for the local characterization of crystalline structures in materials, such as cathode materials for Li-ion batteries or perovskite materials for photovoltaics. However,…
We present a novel method to differentiate stream-like and shell-like tidal remnants of stellar systems in galactic halos using the density-based approach of the clustering algorithm AstroLink. While previous studies lean on observation,…
High-temperature superconductor $Bi_{2}Sr_{2}CaCu_{2}O_{8}+x$ has been investigated by the high-resolution electron microscope (HREM) and the photodensitometric technique in order to resolve the sub-atomic shifts in the modulated structure.…
The defect morphology is an essential aspect of the evolution of crystals' microstructure and its response to stress. Existing methods either only report defect concentration or characterize only some of the defect morphologies. The need…
Aberration-corrected scanning transmission electron microscopes (STEM) provide sub-angstrom lateral resolution; however, the large convergence angle greatly reduces the depth of field. For microscopes with a small depth of field,…
With continuous progression of Moore's Law, integrated circuit (IC) device complexity is also increasing. Scanning Electron Microscope (SEM) image based extensive defect inspection and accurate metrology extraction are two main challenges…
Motivated by the need for less destructive imaging of nanostructures, we pursue point-source in-line holography (also known as point projection microscopy, or PPM) with very low energy electrons (-100 eV). This technique exploits the recent…
Scanning transmission electron microscopy (STEM) is widely used tool for materials characterisation. However, being a scanned technique, STEM is susceptible to sample, stage or beam drift, manifesting as distortions within images or…
Strain engineering enables the direct modification of the atomic bonding and is currently an active area of research aimed at improving the electrocatalytic activity. However, directly measuring the lattice strain of individual catalyst…
A growing need exists for efficient and accurate methods for detecting defects in semiconductor materials and devices. These defects can have a detrimental impact on the efficiency of the manufacturing process, because they cause critical…
Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and…
Space charge layers (SCLs) at grain boundaries play a crucial role in modulating local electric fields and influencing the functional properties of materials, such as oxygen vacancy migration and ionic conductivity in oxide ceramics.…
Atomic resolution imaging is key to understanding thin film growth and how a particular set of conditions influences properties. Whilst such imaging in the scanning transmission electron microscope (STEM) has had transformative impact in…
Directed atomic fabrication using an aberration-corrected scanning transmission electron microscope (STEM) opens new pathways for atomic engineering of functional materials. In this approach, the electron beam is used to actively alter the…
In differential phase contrast scanning transmission electron microscopy (DPC-STEM), variability in dynamical diffraction resulting from changes in sample thickness and local crystal orientation (due to sample bending) can produce contrast…
We explore the effect of stacking fault defects on the transmission of forces in three-dimensional face-centered-cubic granular crystals. An external force is applied to a small area at the top surface of a crystalline packing of granular…
Scanning Electron Microscopy (SEM) is indispensable in modern materials science, enabling high-resolution imaging across a wide range of structural, chemical, and functional investigations. However, SEM imaging remains constrained by…
Atomically thin transition metal dichalcogenides (TMDs) have distinct opto-electronic properties including enhanced luminescence and high on-off current ratios, which can be further modulated by making more complex TMD heterostructures.…