Related papers: Multisubband Plasmons in InAs/GaSb Broken Gap Quan…
A magnetotransport and quantum capacitance of the two-dimensional electron gas in HgTe/Cd$_x$Hg$_{1-x}$Te quantum wells of a width ($20.2-46.0$)~nm are experimentally investigated. It is shown that the first energy subband of spatial…
We study linear and non-linear coefficients of the intersubband absorption in InSb-based stepped quantum wells subjected to an in-plane magnetic field. We consider also a transverse electric field to achieve near resonance conditions.…
We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic…
The band structure of semimagnetic Hg_1-yMn_yTe/Hg_1-xCd_xTe type-III quantum wells has been calculated using eight-band kp model in an envelope function approach. Details of the band structure calculations are given for the Mn free case…
We present a theoretical study of the dispersion relation of surface plasmon resonances of mesoscopic metal-dielectric-metal microspheres. By analyzing the solutions to Maxwell's equations, we obtain a simple geometric condition for which…
Coquelin et al. studied biperiodic semiconductor superlattices, which consist of alternating cell types, one with wide wells and the other narrow wells, separated by equal strength barriers. If the wells were identical, it would be a simply…
In this paper, using the quantum multistream model, we develop a method to study the electronic band structure of plasmonic excitations in streaming electron gas with arbitrary degree of degeneracy. The multifluid quantum hydrodynamic model…
We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. Electrostatic gate is used to push the Fermi level into the gap regime, where the conductance…
Subband structure and depolarization shifts in an ultra-high mobility GaAs/Al_{0.24}Ga_{0.76}As quantum well are studied using magneto-infrared spectroscopy via resonant subband Landau level coupling. Resonant couplings between the 1st and…
The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb, InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction applying a recently developed approximate calculation scheme,…
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally…
Incorporation of bismuth (Bi) in dilute quantities in (In)GaAs has been shown to lead to unique electronic properties that can in principle be exploited for the design of high efficiency telecomm lasers. This motivates the development of…
We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped…
A two-dimensional (2D) quantum electron system is characterized by the quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlling the inter-subband transitions have wide technological…
Mode-division-multiplexing (MDM) is attractive as a means to increase the link capacity of a single wavelength for optical interconnects via the use of multiple mode-channels in multimode bus waveguide.In order to route the data in MDM…
Nanoscale light-matter interaction in the weak-coupling regime has been achieved with unique hyperbolic metamaterial modes possessing a high density of states. Here, we show strong coupling between intersubband transitions (ISBTs) of a…
The photonic band structure of a three-dimensional lattice of metal spheres is calculated using an embedding technique, in the frequency range of the Mie plasmons. For a small filling factor of the spheres, Maxwell-Garnett theory gives an…
An asymptotic corrected exchange hole potential analogous to Becke-Roussel [A. D. Becke and M. R. Roussel, Phys. Rev. A 39, 3761 (1989)] is constructed by modeling the exchange hole using the generalized coordinate transformation based on…
Interface phonon (IF) modes of c-plane oriented [AlN/GaN]20 and Al0.35Ga0.65N/Al0.55Ga0.45N]20 multi quantum well (MQW) structures grown via plasma assisted molecular beam epitaxy are reported. The effect of variation in dielectric constant…