Related papers: Acoustic Phonon-Induced Dephasing in Gallium Nitri…
We report on the temperature dependence of the mobility, $\mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to…
We investigate temperature-dependent spectral properties of a single defect in hexagonal boron nitride (hBN). We observe a sharp zero-phonon line (ZPL) emission accompanied by Stokes and anti-Stokes optical phonon sidebands assisted by the…
The coupling between longitudinal optical (LO) phonons and plasmons plays a fundamental role in determining the performance of doped semiconductor devices. In this work, we report a comparative investigation into the dependence of the…
Thin-film lithium niobate (TFLN) has emerged as a versatile platform for phononic and photonic devices with applications ranging from classical signal processing to quantum technologies. However, acoustic loss fundamentally limits the…
We experimentally and theoretically investigate dephasing of zero dimensional microcavity polaritons in electrically tunable single dot photonic crystal nanocavities. Such devices allow us to alter the dot-cavity detuning in-situ and to…
High harmonic generation (HHG) in solid and gaseous targets has been proven to be a powerful avenue for the generation of attosecond pulses, whereas the influence of electron-phonon scattering on HHG is a critical outstanding problem. Here…
Several experiments have shown qubit coherence decay of the form $\mathrm{exp}[-(t/T_2)^\alpha]$ due to environmental charge-noise fluctuations. We present a microscopic description for temperature dependences of the parameters $T_2$ and…
Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host material, as well as its remarkable chemical stability and…
Pure dephasing of an exciton in a small quantum dot by optical and acoustic phonons is calculated using the ``independent boson model''. Considering the case of zero temperature the dephasing is shown to be only partial which manifests…
Recently, high-order sideband polarimetry has been established as an experimental method that links the polarization of sidebands to an interference of Bloch wavefunctions. However, the robustness of sideband polarizations to increasing…
Polaron dephasing processes are investigated in InAs/GaAs dots using far-infrared transient four wave mixing (FWM) spectroscopy. We observe an oscillatory behaviour in the FWM signal shortly (< 5 ps) after resonant excitation of the lowest…
We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from…
Color centers in hexagonal boron nitride (hBN) have attracted significant interest due to their potential applications in future optical quantum technologies. For most applications, scalable on-demand fabrication is a key requirement.…
In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines…
We report Raman spectra measurements on a MoS2 monolayer supported on SiO2 as a function of temperature. Unlike in previous studies, the positions of the two main Raman modes, E2g1 and A1g exhibited nonlinear temperature dependence.…
We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the…
The impact of point defects on thermal transport in uranium nitride (UN) is investigated using a MLIP combined with Green-Kubo (GK) and normal mode analysis (NMA) methods over 300-1500 K. In pristine UN, temperature-dependent calculations…
We report microwave-driven photon-assisted tunneling in a suspended carbon nanotube double quantum dot. From the resonant linewidth at a temperature of 13 mK, the charge dephasing time is determined to be 280 +- 30 ps. The linewidth is…
We propose phonon spectroscopy by electric measurements of the low-temperature conductance of coupled-quantum dots, specifically employing dephasing of the quantum electronic transport by the phonons. The setup we consider consists of a…
Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature. This unusual observation was traced back to decoupling from in-plane…