Related papers: A Novel Thermal Network Model and Electro-Thermal …
A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal…
This work presents a self-heating study of a 40-nm bulk-CMOS technology in the ambient temperature range from 300 K down to 4.2 K. A custom test chip was designed and fabricated for measuring both the temperature rise in the MOSFET channel…
Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect…
By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…
We study high-field electrical breakdown and heat dissipation from carbon nanotube (CNT) devices on SiO2 substrates. The thermal "footprint" of a CNT caused by van der Waals interactions with the substrate is revealed through molecular…
With the continuous advancement of nanotechnology, nanodevices have become crucial components in computing, sensing and energy conversion applications. However, the structures of nanodevices typically possess sub-wavelength dimensions and…
By combining Three Dimensional Integrated Circuits with the Network-on-Chip infrastructure to obtain 3D Networks-on-Chip (3D-NoCs), the new on-chip communication paradigm brings several advantages on lower power, smaller footprint and lower…
Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the…
In this article, we study the impact of self-heating effects (SHEs) and middle of line (MOL) and back-end of line (BEOL) induced parasitics on multi-tier CFET design, where multiple nanosheet devices are vertically stacked. We analyze and…
Self-heating (SHE) TCAD numerical simulations have been performed, for the first time, on 30nm FDSOI MOS transistors at extremely low temperatures. The self-heating temperature rise dTmax and the thermal resistance Rth are computed as…
In this paper, a simple algorithm for detailed system-level thermal noise analysis is developed, demonstrated, and verified. This method uses noise-wave theory and noise covariance matrices to cascade noise and scattering parameters of…
Controlling thermal transport is important for a range of devices and technologies, from phase change memories to next-generation electronics. This is especially true in nano-scale devices where thermal transport is altered by the influence…
Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly-scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce…
In this dissertation, thermal and electrical properties of aligned multiwall carbon nanotubes (MWNTs) prepared by thermal decomposition of hydrocarbons have been experimentally studied. The thesis consists of six chapters. Ch1 is an…
Hardware implementation of neuromorphic computing can significantly improve performance and energy efficiency of machine learning tasks implemented with spiking neural networks (SNNs), making these hardware platforms particularly suitable…
We discuss the design of the thermal analog of logic gates in systems made of a collection of nanoparticles. We demonstrate the possibility to perform NOT, OR, NOR, AND and NAND logical operations at submicrometric scale by controlling the…
The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This work describes a technique to extract the parameters of an…
Quantum thermodynamics addresses the dynamics of heat flow in quantum devices driven out of equilibrium. Although mesoscopic circuits at low temperatures provide a flexible platform to explore this dynamics, experimental studies are wanting…
Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…
The ion-sensitive field-effect transistor (ISFET) is an emerging technology that has received much attention in numerous research areas, including biochemistry, medicine, and security applications. However, compared to other types of…