Related papers: Neural Object Detection for 4D STEM: High-Throughp…
Phase contrast transmission electron microscopy (TEM) is a powerful tool for imaging the local atomic structure of materials. TEM has been used heavily in studies of defect structures of 2D materials such as monolayer graphene due to its…
Scanning transmission electron microscopy (STEM) is an extremely versatile method for studying materials on the atomic scale. Many STEM experiments are supported or validated with electron scattering simulations. However, using the…
Aberration corrected scanning transmission electron microscopes (STEM) enable to determine local strain fields, composition and bonding states at atomic resolution. The precision to locate atomic columns is often obstructed by scan…
Differential phase contrast (DPC) imaging in scanning transmission electron microscopy (STEM) maps projected electric fields through the phase sensitivity of segmented low-angle detectors. Although typically applied to atomic-resolution…
During the last few years, serial electron crystallography (Serial Electron Diffraction, SerialED) has been gaining attention for the structure determination of crystalline compounds that are sensitive to the irradiation of the electron…
Three-dimensional electron diffraction (3DED) is a powerful technique providing for crystal structure solutions of sub-micron sized crystals too small for structure determination via X-ray techniques. The entry requirement, however, of a…
Automated experiments in scanning transmission electron microscopy (STEM) require rapid image segmentation to optimize data representation for human interpretation, decision-making, site-selective spectroscopies, and atomic manipulation.…
Deep learning has demonstrated superb efficacy in processing imaging data, yet its suitability in solving challenging inverse problems in scientific imaging has not been fully explored. Of immense interest is the determination of local…
The advent of modern, high-speed electron detectors has made the collection of multidimensional hyperspectral transmission electron microscopy datasets, such as 4D-STEM, a routine. However, many microscopists find such experiments daunting…
Controlling crystalline material defects is crucial, as they affect properties of the material that may be detrimental or beneficial for the final performance of a device. Defect analysis on the sub-nanometer scale is enabled by…
Ultrafast electron diffraction (UED) instruments typically operate at kHz or lower repetition rates and rely on indirect detection of electrons. However, these experiments encounter limitations because they are required to use electron…
We compare two transmission electron microscopy (TEM) based techniques that can provide highly spatially resolved quantitative measurements of magnetic induction fields at high sensitivity. To this end, the magnetic induction of a…
Diffuse optical imaging (DOI) offers valuable insights into scattering mediums, but the quest for high-resolution imaging often requires dense sampling strategies, leading to higher imaging errors and lengthy acquisition times. This work…
In four-dimensional scanning transmission electron microscopy (4D STEM) a focused beam is scanned over a specimen and a diffraction pattern is recorded at each position using a pixelated detector. During the experiment, it must be ensured…
Lattice strain measurement of nanoscale semiconductor devices is crucial for the semiconductor industry as strain substantially improves the electrical performance of transistors. High resolution scanning transmission electron microscopy…
The use of differential phase contrast (DPC) in scanning transmission electron microscopy (STEM) has shown much promise for directly investigating the functional properties of a material system, leveraging the natural coupling between the…
Here we show that compressive sensing allow 4-dimensional (4-D) STEM data to be obtained and accurately reconstructed with both high-speed and low fluence. The methodology needed to achieve these results compared to conventional 4-D…
With continuous progression of Moore's Law, integrated circuit (IC) device complexity is also increasing. Scanning Electron Microscope (SEM) image based extensive defect inspection and accurate metrology extraction are two main challenges…
Despite the widespread use of Scanning Transmission Electron Microscopy (STEM) for observing the structure of materials at the atomic scale, a detailed understanding of some relevant electron beam damage mechanisms is limited. Recent…
We present a few recent developments in the field of electron backscatter diffraction (EBSD). We highlight how open source algorithms and open data formats can be used to rapidly to develop microstructural insight of materials. We include…