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Modeling lithium's atomic-scale behavior is critical for its roles in plasma-facing fusion components and lithium-ion batteries, yet it remains challenging across phase regimes. This study benchmarks ReaxFF, 2NN-MEAM, and SNAP potentials…
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresist-based detection technique to map the spatial distribution…
The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic, yet computationally efficient, empirical models that can capture all observed…
We study local oxidation induced by dynamic atomic force microscopy (AFM), commonly called TappingMode AFM. This minimizes the field induced forces, which cause the tip to blunt, and enables us to use very fine tips. We are able to…
Folding of ribozymes into well-defined tertiary structures usually requires divalent cations. How Mg$^{2+}$ ions direct the folding kinetics has been a long-standing unsolved problem because experiments cannot detect the positions and…
A finite element model consisting of a conducting filament with or without a gap was used to reproduce behavior of TaO$_x$-based resistive switching devices. The specific goal was to explore the range of possible filament parameters such a…
We show that, in tantalum oxide resistive memories, activation power provides a multi-level variable for information storage that can be set and read separately from the resistance. These two state variables (resistance and activation…
Disruptions in tokamak plasmas may lead to the generation of runaway electrons that have the potential to damage plasma-facing components. Improved understanding of the runaway generation process requires interpretative modelling of…
In this research, we report the fabrication and characterization of a Ta/HfO2-x/Mo memristor. The synaptic behavior of a Ta/HfO2-x/Mo memristor has been investigated. HfO2-x (15 nm) was grown using the pulsed laser deposition (PLD) method.…
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic…
A simple means of detecting and spatially mapping volatile and nonvolatile conductive filaments in metal/oxide/metal cross-point devices is introduced and its application demonstrated. The technique is based on thermal discolouration of a…
Global gyrokinetic simulations find a strong helically-trapped electron mode (HTEM) driven by density gradients in the optimized stellarator W7-X fusion experiment. The eigenmode structure localizes in the inner side of the torus with an…
Tantalum dioxide (TaO2) is a metastable tantalum compound. Here, we report the epitaxial stabilization of TaO2 on Al2O3 (1-102) (r-plane sapphire) substrates using suboxide molecular-beam epitaxy (MBE) and thermal laser epitaxy (TLE),…
Circular dichroism, arising from interactions with light fields of opposite spin angular momentum, has become a fundamental tool for molecular characterization. Meanwhile, helical dichroism (HD) - the dichroic response to vortex beams…
Atoms in spatially dependent light fields are attracted to local intensity maxima or minima depending on the sign of the frequency difference between the light and the atomic resonance. For light fields confined in open high-Q optical…
The control and manipulation of filamentary resistive switching (FRS) is essential for practical applications in fields like non-volatile memories and neuromorphic computing. However, key aspects of the dynamics of conductive filament…
Charge transfer between metal nanoparticles and the supported TiO2 surface is primarily important for catalytic applications as it greatly affects the catalytic activity and the thermal stability of the deposited nanoparticles on the…
Ionic conduction in crystalline solids is conventionally understood to proceed via atomic-scale defects such as vacancies or interstitials. Here, by addressing the long-standing structural ambiguity of high-temperature tetragonal tantalum…
Tantalum oxides (Ta$_2$O$_5$) are characterised by attractive physical and chemical properties, such as high dielectric constants and anti-reflection behaviour. Recently, Ta$_2$O$_5$ nanoparticles have also been proposed as possible…
While the mechanical behavior of noble nanoporous metals has been the subject of numerous studies, less is known about their recently developed refractory-based counterparts. Here we report on the mechanical properties, deformation…