Related papers: AI-predicted PT-symmetric magnets
Amorphous and amorphous porous palladium are key materials for catalysis, hydrogen storage, and functional applications, but their complex structures present computational challenges. This study employs a deep neural network trained on…
We present results of single crystal neutron diffraction experiments on the rare-earth, half-Heusler antiferromagnet (AFM) NdBiPt. This compound exhibits an AFM phase transition at $T_{\mathrm N}=2.18$~K with an ordered moment of…
Antiferromagnetic materials, whose time-reversal symmetry is broken, can be classified into the Z2 topology if they respect some specific symmetry. Since the theoretical proposal, however, no materials have been found to host the…
Magnetic materials have been applied in a large variety of technologies, from data storage to quantum devices. The development of 2D materials has opened new arenas for magnetic compounds, even when classical theories discourage their…
Topological materials (TMs) showcase intriguing physical properties defying expectations based on conventional materials, and hold promise for the development of devices with new functionalities. While several theoretically proposed TMs…
Unconventional magnetism has emerged as a transformative frontier in condensed matter physics. Such phases are characterized by substantial non-relativistic spin splitting (NSS) in symmetry-compensated magnets. They have been classified by…
We revisit the antiferromagnetic structure of $\rm Tb_{14}Ag_{51}$ [P. Fischer., $et\, al$. (2005). PRB, 72 134413] with the propagation vector $[{1\over3},{1\over3},{0}] $ and parent space group $P6/m$ using both magnetic symmetry and…
A fundamental difference between antiferromagnets and ferromagnets is the lack of linear coupling to a uniform magnetic field due to the staggered order parameter. Such coupling is possible via the Dzyaloshinskii-Moriya (DM) interaction but…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW…
Noncentrosymmetric materials play a critical role in many important applications such as laser technology, communication systems,quantum computing, cybersecurity, and etc. However, the experimental discovery of new noncentrosymmetric…
Antiferromagnets (AFMs) hold promise for applications in digital logic. However, switching AFM domains is challenging, as magnetic fields do not couple to the bulk antiferromagnetic order parameter. Here we show that magnetic-field-driven…
Group theoretical methods are used to determine the electromagnetic properties of artificial magnetic meta-materials, based solely upon the symmetries of the underlying constituent particles. Point groups for such materials are determined.…
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order…
The ever-growing demand for device miniaturization and energy efficiency in data storage and computing technology has prompted a shift towards antiferromagnetic (AFM) topological spin textures as information carriers, owing to their…
By means of systematic first-principles calculations based on density functional theory we search for suitable materials that can host antiferromagnetically coupled skyrmions. We concentrate on fcc-stacked (111)-oriented metallic $Z$/Co/Pt…
How to electrically control magnetic properties of a magnetic material is promising towards spintronic applications, where the investigation of carrier doping effects on antiferromagnetic (AFM) materials remains challenging due to their…
Antiferromagnetic states with spin-split electronic structure give rise to novel spintronic, magnonic, and electronic phenomena despite (near-) zero net magnetization. The simplest odd-parity spin splitting - $p$-wave - was originally…
Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresistance-based spintronic devices. Here we propose an…
Amorphous silicon (a-Si) is a widely studied non-crystalline material, and yet the subtle details of its atomistic structure are still unclear. Here, we show that accurate structural models of a-Si can be obtained by harnessing the power of…