Related papers: AI-predicted PT-symmetric magnets
Realizing odd-parity, time-reversal-preserving, non-relativistic spin splitting is a central goal for spintronics applications. We propose a group-theory-based microscopic framework to induce odd-parity spin splitting from coplanar…
The interplay of antiferromagnetic order, momentum-dependent Bloch spin-splitting, time-reversal (T), and parity (P) symmetries in non-relativistic systems has emerged as a central theme for spintronics. Two well-known examples are…
Inversion-asymmetric antiferromagnets (AFMs) with odd-parity spin-polarization pattern have been proposed as a new venue for spintronics. These AFMs require commensurate ordering to ensure an effective time-reversal symmetry, which…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
Antiferromagnetic (AFM) materials have potential advantages for spintronics due to their robustness, ultrafast dynamics, and magnetotransport effects. However, the missing spontaneous polarization and magnetization hinders the efficient…
Altermagnetism, a new magnetic phase, has been theoretically proposed and experimentally verified to be distinct from ferromagnetism and antiferromagnetism. Although altermagnets have been found to possess many exotic physical properties,…
The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route towards high-speed magnetic storage devices with low energy consumption and high…
Altermagnetic (AM) materials have recently attracted significant interest due to the non-relativistic momentum-dependent spin splitting of their electronic band structure which may be useful for antiferromagnetic (AFM) spintronics. So far,…
Spontaneous symmetry breaking underlies functional electronic phenomena in quantum materials. Breaking space-inversion ($\mathcal{P}$) or time-reversal ($\mathcal{T}$) symmetry can generate spin-split electronic bands central to modern…
Altermagnets (AM) are a novel class of magnetic materials with zero net magnetization but broken time-reversal symmetry and spin-split bands exceeding the spin-orbit coupling scale, offering unique control of individual spin-channel and…
The recently discovered altermagnets (AMs), hosting momentum-dependent spin splitting and vanishing net magnetization, have attracted intensive attention for their promising application in novel spintronics. However, limited by facility and…
Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and…
We present results based on local spin density calculations of a computational search for half-metallic (HM) antiferromagnetic (AFM) materials within the class of double perovskite structure oxides LaM'M''O3 that incorporate open shell 3d…
Our high-throughput computational screening of the Materials Project database has identified 140 candidate materials exhibiting antiferromagnetic behavior in the $Pnma$ space group. Through systematic density functional theory calculations…
The ultrathin structure and efficient spin dynamics of two-dimensional (2D) antiferromagnetic (AFM) materials hold unprecedented opportunities for ultrafast memory devices, artificial intelligence circuits, and novel computing technology.…
Antiferromagnetic (AFM) spintronics has been receiving tremendous attention due to their ultrafast kinetics, zero stray field, immune to external magnetic field, and potential to minimizing magnetic storage devices. The optical control of…
Recently, a new class of magnetic phenomenon, called altermagnetism, was proposed where the underlying spin configuration resembles antiferromagnetic structure, but the system violates \textbf{PT} (PT: Parity times Time reversal) symmetry…
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and…
Considering the similarity of the real-space configurations for the opposite spin sublattices in both antiferromagnets (AFM) and altermagnets (AM), the relationship between them should be profound. In this work, we demonstrate that AFM and…
Actinide and lanthanide-based materials display exotic properties that originate from the presence of itinerant or localized f-electrons and include unconventional superconductivity and magnetism, hidden order; and heavy fermion behavior.…