Related papers: Low-loss Sb$_2$S$_3$ Optical Phase Shifter Enabled…
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film…
Optical phase shifters are extensively used in integrated optics not only for telecom and datacom applications, but also for sensors and quantum computing. While various active solutions have been demonstrated, progress in passive phase…
The structures, optical and electrical transport properties of SnO$_2$ films, fabricated by rf sputtering method at different oxygen partial pressures, were systematically investigated. It has been found that preferred growth orientation of…
The primary mechanism of optical memristive devices relies on the phase transitions between amorphous-crystalline states. The slow or energy hungry amorphous-crystalline transitions in optical phase-change materials are detrimental to the…
Superconducting Nb3Sn films can be synthesized by controlling the atomic concentration of Sn. Multilayer sequential sputtering of Nb and Sn thin films followed by high temperature annealing is considered as a method to fabricate Nb3Sn…
The effects of 200-MeV Ag^{+15} ion irradiation on the optical properties of TiO_{2} and SnO_{2} thin films prepared by using the RF magnetron sputtering technique were investigated. These films were characterized by using UV-vis…
Oxygen vacancies are often attributed to changes in the electronic transport for perovskite oxide materials (ABO$_3$). Here, we use density functional theory (DFT) coupled with non-equilibrium Green's functions (NEGF) to systematically…
Multi-pulse nonlinear THz spectroscopies enable a new understanding of interacting metallic systems via their sensitivity to novel correlation functions. Here, we investigated the THz nonlinear properties of the dilute metallic phase of…
A novel vertical hysteresis loop shift is observed for a bilayer thin film of Ni80Fe20/SrRuO3 (1:2 thickness ratio) on SrTiO3 substrate, after field cooled through the Curie temperature ~125 K of SrRuO3, whereas no shift is found for zero…
The scattering phase, defined as $ \log \det S ( \lambda ) / 2\pi i $ where $ S ( \lambda ) $ is the (unitary) scattering matrix, is the analogue of the counting function for eigenvalues when dealing with exterior domains and is closely…
Differential cross sections for $^3$He-$\alpha$ scattering were measured in the energy range up to 3 MeV. These data together with other available experimental results for $^3$He $+ \alpha$ and $^3$H $+ \alpha$ scattering were analyzed in…
We study the $^1$S$_0 - ^3$D$_2$ and $^1$S$_0 - ^3$D$_3$ transitions in Cu II and the $^1$S$_0 - ^3$P$^{\rm o}_2$ transition in Yb III as possible candidates for the optical clock transitions. A recently developed version of the…
The technological conditions of oxygen content variation in epitaxial La0.7Sr0.3MnO3-{\delta} films and the peculiarities of change of their transport characteristics were investigated. The films were grown onto single crystal SrTiO3…
Raman studies of nanocomposite SiCN thin film by sputtering showed that with an increase of substrate temperature from room temperature to 500oC, a transition from mostly sp2 graphitic phase to sp3 carbon took place which was observed from…
Interconversion between charge and spin currents is a key phenomenon in realizing next-generation spintronic devices. Highly efficient spin-charge interconversion is expected to occur at band crossing points in materials with large…
The temperature dependent Hall mobility data from La-doped SrTiO3 thin films has been analyzed and modeled considering various electron scattering mechanisms. We find that a ~6 meV transverse optical phonon (TO) deformation potential…
We report the charge compensation in topological insulator thin films due to the laser fluence-induced segregation of the Sb2Se3 phase. Sb doped Bi2Se3 films were deposited on commercial Si substrates coated with 300 nm of amorphous SiO2…
The suitability of Ti as a band gap modifier for $\alpha$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural {\alpha}-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a…
Lowering the operating temperature of Solid Oxide Fuel Cells (SOFCs) is essential for improving durability and enabling large scale commercialization. Mixed ionic-electronic conductors (MIECs) of the Ruddlesden-Popper family, such as…
Phase-change materials (PCMs)-based integrated photonic memory offers a viable pathway for the development of neuromorphic computing chip. The sizable optical contrast in the telecom band between amorphous and crystalline phases of PCM, in…