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Ultrafast laser systems operating with high-average power in the wavelength range from 1.9 um to 3 um are of interest for a wide range of applications for example in spectroscopy, material processing and as drivers for secondary sources in…
A design strategy for achieving broadband optical gain in GaSb-based semiconductor amplifiers operating beyond 2 \mu m is presented. By employing asymmetric GaInSb/AlGaAsSb quantum wells (QWs) of varying thicknesses, a flat and wide gain…
We propose a unified description of intersubband absorption saturation for quantum wells inserted in a resonator, both in the weak and strong light-matter coupling regimes. We demonstrate how absorption saturation can be engineered. In…
Mid-infrared fibre lasers are crucial for applications in spectroscopy, medical diagnostics, and environmental sensing, owing to their ability to interact with fundamental molecular vibrational bands. However, achieving stable ultrafast…
The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si)GeSn based quantum wells (QWs) have been investigated…
Surface-acoustic-wave (SAW) resonators operating at gigahertz (GHz) frequencies are widely used in wireless telecommunication and quantum information processing. Successful implementation of such resonators calls for detailed microscopic…
Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 $\mu$m optical communication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAs reduces the…
The GaAs/AlGaAs quantum well solar cell (QWSC) shows promise as a novel approach to higher efficiency solar cells but suffers from a poor short circuit current Jsc. We report on efforts to reduce this problem with the use of compositional…
Light trapping in sub-wavelength semiconductor nanowires (NWs) offers a promising approach to simultaneously reducing material consumption and enhancing photovoltaic performance. Nevertheless, the absorption efficiency of a NW, defined by…
Engineering light absorption in the extended short-wave infrared (e-SWIR) range using scalable materials is a long-sought-after capability that is crucial to implement cost-effective and high-performance sensing and imaging technologies.…
The quantum well solar cell (QWSC) is a p - i - n solar cell with quantum wells in the intrinsic region. Previous work has shown that QWSCs have a greater open circuit voltage (Voc) than would be provided by a cell with the quantum well…
We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates.…
We demonstrate a ytterbium (Yb) and an erbium (Er)-doped fiber laser Q-switched by a solution processed, optically uniform, few-layer tungsten disulfide saturable absorber (WS2-SA). Nonlinear optical absorption of the WS2-SA in the…
Magnetic resonance imaging (MRI) is an important non-invasive clinical tool that can produce high-resolution and reproducible images. However, a long scanning time is required for high-quality MR images, which leads to exhaustion and…
We demonstrate that absorption saturation of a mid-infrared intersubband transition can be engineered to occur at moderate light intensities of the order of 10-20 kW$.$cm$^{-2}$ and at room temperature. The structure consists of an array of…
Intersubband (ISB) transitions in semiconductor multi-quantum well (MQW) structures are promising candidates for the development of saturable absorbers at terahertz (THz) frequencies. Here, we exploit amplitude and phase-resolved…
Membrane external-cavity surface-emitting lasers (MECSELs) are at the forefront of pushing the performance limits of vertically emitting semiconductor lasers. Their simple idea of using just a very thin (hundreds of nanometers to few…
The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards…
State-Space Models (SSMs) have attracted considerable attention in Image Restoration (IR) due to their ability to scale linearly sequence length while effectively capturing long-distance dependencies. However, deploying SSMs to edge devices…
Silicon photonic integrated circuits critically depend on compact on-chip light sources, for which nanowire (NW) lasers are an attractive solution. However, their practical implementation is often limited by broad emission linewidths and…