Related papers: Magnetic-field dependent VB- spin decoherence in h…
Hexagonal boron nitride (h-BN) hosts pure single-photon emitters that have shown evidence of optically detected electronic spin dynamics. However, the electrical and chemical structure of these optically addressable spins is unknown, and…
Highly correlated orbitals coupled with phonons in two-dimension are identified for paramagnetic and optically active boron vacancy in hexagonal boron nitride by first principles methods which are responsible for recently observed optically…
There has been growing interest in studying hexagonal boron nitride (hBN) for quantum technologies. Here, we investigate nitrogen isotope effects on boron vacancy (V$_\text{B}$) defects, one of the candidates for quantum sensors, in…
Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing (ISC) transitions facilitate…
Quantum sensing based on solid-state spin defects provides a uniquely versatile platform for imaging physical properties at the nanoscale under diverse environmental conditions. Operation of most sensors used to-date is based on projective…
We investigate pure dephasing decoherence (free induction decay and spin echo) of a spin qubit interacting with a nuclear spin bath. While for infinite magnetic field B the only decoherence mechanism is spectral diffusion due to dipolar…
Determination of the chemical and spectroscopic natures of defects in materials such as hexagonal boron nitride (h-BN) remains a serious challenge for both experiment and theory. To establish basics needs for reliable calculations, we…
Boron vacancy centre ($V_{\rm B}^-$) ensembles in hexagonal boron nitride (hBN) have attracted recent interest for their potential as two-dimensional solid-state quantum sensors. Irradiation is necessary for $V_{\rm B}^-$ creation, however,…
Hexagonal boron nitride (hBN) plays a central role in nanoelectronics and nanophotonics. Moreover, hBN hosts room-temperature quantum emitters and optically addressable spins, making it promising for quantum sensing and quantum photonics.…
Optically active defects in hexagonal boron nitride (hBN) are promising candidates for active components in emerging quantum technologies, such as single-photon emitters and spin centers. However, further progress in hBN-based quantum…
Mechanically isolated defect centers in hexagonal boron nitride are promising coherent quantum emitters, yet spectral instabilities persist, and their spin-related nature remains unclear. Here we investigate a single mechanically isolated…
We theoretically study the decoherence and the dynamical decoupling control of nitrogen-vacancy center electron spins in high-purity diamond, where the hyperfine interaction with $^{13}$C nuclear spins is the dominating decoherence…
Quantum emitters in hexagonal boron nitride (hBN) that exhibit optically detected magnetic resonance (ODMR) signatures have recently garnered significant attention as an emerging solid-state platform for quantum technologies. However, the…
Point defect quantum bits in semiconductors have the potential to revolutionize sensing at atomic scales. Currently, vacancy related defects, such as the NV center in diamond and the VB$^-$ in hexagonal boron nitride (hBN), are at the…
Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this…
Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically-active defects with exceptional properties such as high brightness and large spectral tuning. However,…
Magnetic measurements under high-pressure conditions are pivotal for the study of superconductivity and magnetic materials but remain challenging due to the micrometer-sized sample in diamond anvil cells (DAC). In this study, we propose a…
Quantum emitters in hexagonal boron nitride (hBN) have gained significant attention due to a wide range of defects that offer high quantum efficiency and single-photon purity at room temperature. Most theoretical studies on hBN defects…
We used optically detected magnetic resonance (ODMR) technique to directly probe electron-spin resonance transitions in the excited state of negatively-charged boron vacancy (VB-) defects in hexagonal boron nitride (hBN) at room…
Optically addressable spin defects hosted in two-dimensional van der Waals materials represent a new frontier for quantum technologies, promising to lead to a new class of ultrathin quantum sensors and simulators. Recently, hexagonal boron…