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One of the most fascinating challenges in Physics is the realization of an electron-based counterpart of quantum optics, which requires the capability to generate and control single electron wave packets. The edge states of quantum spin…

Based on density functional theory and Berry curvature calculations, we predict that p-p band inversion type quantum spin Hall effect (QSHE) can be realized in a series of two dimensional (2D) bilayer honeycomb TlM (M = N, P, As, Sb), which…

The in-plane photoelectric (IPPE) effect is a recently discovered [Sci. Adv. \textbf{8}, eabi8398 (2022)] quantum phenomenon which enables efficient detection of terahertz (THz) radiation in semiconductor structures with a two-dimensional…

In recent years, the spin Hall effect has received great attention because of its potential application in spintronics and quantum information processing and storage. However, this effect is usually studied under the external homogeneous…

Landau level (LL) engineered photonic spin Hall effect (PSHE) holds great promise for nanoscale manipulation and steering of magneto-optical transport in two-dimensional atomic systems. Herein, we theoretically investigate PSHE modulated by…

The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…

We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin…

Photonic structures offer unique opportunities for controlling light-matter interaction, including the photonic spin Hall effect associated with the transverse spin-dependent displacement of light that propagates in specially designed…

In this work, we report on the emergence of a photonic Hall effect (PHE) system within a narrow filtered background of a one-dimensional defective optical dielectric structure with graphene under the static QHE regime. It is observed that…

Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures…

The nonlinear Hall effect has recently garnered significant attention as a powerful probe of Fermi surface quantum geometry in metals. While current studies mainly focus on the nonlinear Hall response driven by quasi-static electric fields…

We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the…

The influence of dephasing on the quantum spin Hall effect (QSHE) is studied. In the absence of dephasing, the longitudinal resistance in a QSHE system exhibits the quantum plateaus. We find that these quantum plateaus are robust against…

Recently, the quantum spin Hall effect has been predicted in (111)-oriented thin films of SnSe and SnTe topological crystalline insulators. It was shown that in these films the energy gaps in the two-dimensional band spectrum depend in an…

The energy and photoluminescence spectra of a two-dimensional electron gas in the fractional quantum Hall regime are studied. The single-particle properties of reversed-spin quasielectrons (QE$_{\rm R}$'s) as well as the pseudopotentials of…

We extend the electrodynamics of two dimensional electron gases to account for the extrinsic spin Hall effect (SHE). The theory is applied to doped graphene decorated with a random distribution of absorbates that induce spin-orbit coupling…

Nonlinear Hall effect (NHE) can originate from the quantum metric mechanism in antiferromagnetic topological materials with PT symmetry, which has been experimentally observed in MnBi2Te4. In this work, we propose that breaking PT symmetry…

We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the…

When a two-dimensional electron gas is exposed to a perpendicular magnetic field and an in-plane electric field, its conductance becomes quantized in the transverse in-plane direction: this is known as the quantum Hall (QH) effect. This…

Quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to the robust gapless states inside insulating bulk gap. Here, by using first-principles calculations, we discover group-IV chalcogenide Si2Te2…