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Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport…

Mesoscale and Nanoscale Physics · Physics 2011-11-09 T. O. Wehling , K. S. Novoselov , S. V. Morozov , E. E. Vdovin , M. I. Katsnelson , A. K. Geim , A. I. Lichtenstein

We report a theoretical low-field magnetotransport study unveiling the effect of pseudospin in realistic models of weakly disordered graphene-based materials. Using an efficient Kubo computational method, and simulating the effect of…

Mesoscale and Nanoscale Physics · Physics 2016-03-11 Frank Ortmann , Alessandro Cresti , Gilles Montambaux , Stephan Roche

Modulation doping, a well-established technique for traditional semiconductor heterostructures, is a promising approach for tailoring carrier concentration in 2D materials devices. In this letter we report on photoinduced modulation doping…

Graphene and carbon nanotubes have extraordinary mechanical and electronic properties. Intrinsic line defects such as local non-hexagonal reconstructions or grain boundaries, however, significantly reduce the tensile strength, but feature…

Materials Science · Physics 2016-07-20 Daniel Berger , Christian Ratsch

The outstanding optoelectronic and valleytronic properties of transition metal dichalcogenides (TMDs) have triggered intense research efforts by the scientific community. An alternative to induce long-range ferromagnetism (FM) in TMDs is by…

Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to…

Mesoscale and Nanoscale Physics · Physics 2015-05-18 Jian-Hao Chen , W. G. Cullen , E. D. Williams , M. S. Fuhrer

In nanocontacts between normal and ferromagnetic metals (N--F) abrupt changes of the order of 1% are detected in differential resistance, dV/dI(V), versus bias voltage, V, on achieving of high current densities, ~10^9 A/cm^2. These features…

We report a first-principles study on the geometric, electronic and magnetic properties of V-doped anatase TiO$_{2}$. The DFT+U (Hubbard coefficient) approach predicts semiconductor band structures for Ti$_{1-x}$V$_{x}$O$_{2}$ (x=6.25 and…

Materials Science · Physics 2007-05-23 Xiaosong Du , Qunxiang Li , Haibin Su , Jinlong Yang

Van der Waals heterostructures combining two-dimensional magnetic and semiconducting layers constitute a promising platform for interfacing magnetism, electronics, and optics. Here, we use resonant optical reflection spectroscopy to the…

Mesoscale and Nanoscale Physics · Physics 2022-12-15 Livio Ciorciaro , Martin Kroner , Kenji Watanabe , Takashi Taniguchi , Atac Imamoglu

Among Transition-Metal Dichalcogenides, mono and few-layers thick VSe2 has gained much recent attention following claims of intrinsic room-temperature ferromagnetism in this system, which have nonetheless proved controversial. Here, we…

2D van der Waals (vdW) ferromagnets have emerged as promising materials for spintronic applications due to their unique magnetic properties and tunability. Controlling ferromagnetism via external stimuli is critical for both fundamental…

Materials Science · Physics 2025-08-12 Riku Iimori , Yuta Kodani , Shaojie Hu , Takashi Kimura

In a ferroelectric field effect transistor (FeFET), it is generally assumed that the ferroelectric gate plays a purely electrostatic role. Recently it has been shown that in some cases, which could be called 'active FeFETs', electronic…

Materials Science · Physics 2018-03-28 Xiaohui Liu , Evgeny Y. Tsymbal , Karin M. Rabe

Research on graphene and other two-dimensional (2D) materials, such as silicene, germanene, phosphorene, hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C3N4), graphitic zinc oxide (g-ZnO) and molybdenum disulphide (MoS2), has…

Materials Science · Physics 2016-03-03 Wei Hu , Jinlong Yang

Using first-principles plane-wave calculations systematic study of magnetic properties of doped two-dimensional honeycomb structures of III-V binary compounds have been conducted, either for magnetic or nonmagnetic dopants. Calculations…

Mesoscale and Nanoscale Physics · Physics 2023-07-19 K. Zberecki

Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological…

It is known that there is a wide class of quasi-two-dimensional graphenelike nanomaterials which in many respects can outperform graphene. So, here in addition to graphene, the attention is directed to stanene (buckled honeycomb structure)…

Mesoscale and Nanoscale Physics · Physics 2019-10-02 S. Krompiewski

Fluorite structure ferroelectrics, especially hafnium oxide, are widely investigated for their application in non-volatile memories, sensors, actuators, RF devices and energy harvesters. Due to the metastable nature of the ferroelectric…

Graphene has vast promising applications on the nanoelectronics and spintronics because of its unique magnetic and electronic properties. Making use of an ab initio spin-polarized density functional theory, implemented by the method of…

Materials Science · Physics 2016-11-26 Zongguo Wang , Shaojing Qin , Chuilin Wang

We demonstrate the gate-tunability of the long-range magnetic order in a p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a low V-doping concentration limit, the long-range ferromagnetic order is enhanced by…

Materials Science · Physics 2020-06-25 Dinh Loc Duong , Seong-Gon Kim , Young Hee Lee

Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van…

Mesoscale and Nanoscale Physics · Physics 2022-01-05 Linfeng Ai , Enze Zhang , Ce Huang , Xiaoyi Xie , Yunkun Yang , Zehao Jia , Yuda Zhang , Shanshan Liu , Zihan Li , Pengliang Leng , Xingdan Sun , Xufeng Kou , Zheng Han , Faxian Xiu
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