Related papers: Time-resolved dynamics of GaN waveguide polaritons
We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a…
One of the challenges of excitonic materials is the accurate determination of the exciton binding energy and bandgap. The difficulty arises from the overlap of the discrete and continuous excitonic absorption at the band edge. Many…
We investigate soliton self-compression and ultraviolet resonant dispersive wave emission in the higher-order modes of a gas-filled hollow capillary fibre. Our simple analytical scaling rules predict shorter required waveguides and…
In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines…
III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/AlN QDs…
A novel method for increasing the extinction ratio of plasmonic waveguide polarizer has been investigated in this work. Aluminum was coated in a 20 microns multi-strips pattern on the top of a SU-8 waveguide to excite the surface plasmons.…
When an exciton in semiconductor is scattered and its energy is decreased far below the resonance energy of the bare exciton state, it has been considered that an exciton-polariton is created immediately by the scattering process, because…
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus…
We show that hexagonal boron nitride (hBN), a two-dimensional insulator, when subjected to an external superlattice potential forms a new paradigm for electrostatically tunable excitons in the near- and mid-ultraviolet (UV). The imposed…
GaN and ZnO microcavities have been grown on patterned silicon substrate. Thanks to a common platform these microcavities share similar photonic properties with large quality factors and low photonic disorder which gives the possibility to…
We present a new method to calculate the polarised synchrotron emission of radio AGN sources using magnetic field information from 3-dimensional relativistic magnetohydrodynamical (RMHD) simulations. Like its predecessor, which uses…
Periodically poled lithium niobate (PPLN) nanophotonic waveguides that simultaneously feature low propagation-loss and uniform periodic poling are essential for a wide range of applications ranging from classical nonlinear…
A method of determining the temperature of the nonradiative reservoir in a microcavity exciton-polariton system is developed. A general relation for the homogeneous polariton linewidth is theoretically derived and experimentally used in the…
Organic semiconductors are a promising platform for ambient polaritonics. Several applications, such as polariton routers, and many-body condensed matter phenomena are currently hindered due to the ultra-short polariton lifetimes in…
Exciton-polaritons can be created in semiconductor microcavities. These quasiparticles act as weakly interacting bosons with very light mass, of the order of $10^{-4}$ times the vacuum electron mass. Many experiments have shown effects…
Among the organic semiconductors, rubrene stands out in terms of hole mobility, luminescence yield and exciton migration distance. A novel type of rubrene microcrystal is prepared in the orthorhombic phase, exhibiting zone-sectored tabular…
Exciton-polaritons in semiconductor microcavities have advanced to become a model system for studying dynamical Bose-Einstein condensation, macroscopic coherence, many-body effects, nonclassical states of light and matter, and possibly…
The growing complexity of integrated photonics necessitates compact, low-power devices that transcend traditional, material-centric design approaches. In this study, we harness non-Hermitian physics to uncover novel properties of coupled…
We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL…
Efficient solid-state photon emitters with longer operating lifetimes in the ultraviolet (UV) wavelength range are crucial for optoelectronic devices. However, finding suitable material candidates has been a significant challenge. Here, we…