Related papers: Efficient spin-orbit torque driven magnetization s…

We discuss a spin-transfer torque device, where the role of the soft ferromagnetic layer is played by a magnetic particle or a magnetic molecule, in weak tunnel contact with two spin polarized leads. We investigate if the magnetization of…

Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with…

Spin-orbit torque (SOT) enables efficient current-driven control of magnetization, offering a promising pathway toward low-power spintronic devices. However, the origin and propagation of both damping-like (DL) and field-like (FL) SOTs in…

It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…

The manipulation of magnetic properties using either electrical currents or gate bias is the key of future high-impact nanospintronics applications such as spin-valve read heads, non-volatile logic, and random-access memories. The current…

Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into…

Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible…

Field-free switching of perpendicular magnetization has been observed in an epitaxial L1$_1$-ordered CoPt/CuPt bilayer and attributed to spin-orbit torque (SOT) arising from the crystallographic $3m$ point group of the interface. Using a…

We examine the influence of crystal growth on the spin-pumping induced inverse spin Hall effect in Fe/Pt bilayers. The morphology of the Fe/Pt interface influences the effective spin mixing conductance. The increase of growth temperature…

A simple, reliable and field-free spin orbit torque (SOT)-induced magnetization switching is a key ingredient for the development of the electrical controllable spintronic devices. Recently, the SOT induced deterministic switching of the…

Spin-orbit torque (SOT) induced by spin Hall and interfacial effects in heavy metal(HM)/ferromagnetic(FM) bilayers has recently been employed to switch the magnetization direction using in-plane current injection. In this paper, using the…

Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…

We report the growth of MgO[001]//Fe(6 nm)/MgO(7 nm) and MgO[001]//Fe(6 nm)/Pt(6 nm) by molecular beam epitaxy and show that the full characterization by spin-orbit ferromagnetic resonance (SO-FMR) allows the determination of magnetic…

Density functional theory (DFT) has been used as an important tool for studying activity of oxygen reduction reaction (ORR) catalysts. The dispersion effects, which are not encountered in many of the previous DFT studies for periodic…

Electrical currents in a magnetic insulator/heavy metal heterostructure can induce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) on the heavy metal side and spin-orbit torques (SOTs) on the magnetic insulator side.…

Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert damping and absence of Ohmic loss. Magnetic order of MIs can be manipulated and even switched by spin-orbit torques (SOTs) generated…

The low power manipulation of magnetization is currently a highly sought-after objective in spintronics. Non ferromagnetic large spin-orbit coupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interesting elements of response…

Orbital torque (OT) offers a highly efficient way for electrical magnetization manipulation. However, its potential in the emerging field of flexible spintronics remains largely unexplored. Here, we demonstrate a flexible and robust OT…

Topological semimetals (TSs) are promising candidates for low-power spin-orbit torque (SOT) devices due to their large charge-to-spin conversion efficiency. Here, we investigated the charge-to-spin conversion efficiency of amorphous PtSn4…

Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second…