Related papers: Identifying high performance spectrally-stable qua…
New schemes that exploit the unique properties of Nitrogen-Vacancy (NV) centers in diamond are presently being explored as a platform for high-resolution magnetic sensing. Here we focus on the ability of a NV center to monitor an adjacent…
Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of SiV0 centers requires careful…
The negatively charged nitrogen-vacancy (NV) center is one of the most significant and widely studied defects in diamond that plays a prominent role in quantum technologies. The precise engineering of the location and concentration of NV…
The negatively-charged silicon-vacancy (SiV$^-$) center in diamond is a promising single photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by…
The interplay between ion beam modification techniques in the MeV range and the controlled generation of negatively charged nitrogen-vacancy (NV-) centers in nitrogen-doped synthetic diamond crystals is explored. An experimental approach…
The negatively charged nitrogen-vacancy defect ($N-V^-$ center) in diamond is an important atomic-scale structure that can be used as a qubit in quantum computing and as a marker in biomedical applications. Its usefulness relies on the…
A recent study [Phys. Rev. B 17 174111 (2022)] has hypothesized the assembly, along a specific type of one-dimensional defects of diamond, of chains of nitrogen-vacancy (NV) centers, potentially enabling the creation of qubit registers via…
The nitrogen-vacancy center (NV) in diamond, with its exceptional spin coherence and convenience in optical spin initialization and readout, is increasingly used both as a quantum sensor and as a building block for quantum networks.…
Diamond membrane devices containing optically coherent nitrogen-vacancy (NV) centers are key to enable novel cryogenic experiments such as optical ground-state cooling of hybrid spin-mechanical systems and efficient entanglement…
Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps…
Solid state quantum emitters, in particular group-IV vacancy centers in diamond, are at the forefront of research in quantum technologies due to their unique optical and spin properties. Reduction of the diamond host size to the nanoscale…
Nitrogen-vacancy (NV) centers in diamond are a leading modality for magnetic sensing and imaging under ambient conditions. However, these sensors suffer from degraded performance due to paramagnetic impurities and regions of stress in the…
The nitrogen-vacancy (NV) center is a well utilized system for quantum technology, in particular quantum sensing and microscopy. Fully employing the NV center's capabilities for metrology requires a strong understanding of the behavior of…
Exposure of matter to high energy, heavy ions induces defects along the trajectories of the ions through electronic and nuclear energy loss processes. Defects, including color centers, can recombine or form along latent damage tracks in…
We characterize a high-density sample of negatively charged silicon-vacancy (SiV$^-$) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we…
Nitrogen vacancy (NV) centers in diamond have emerged in recent years as leading quantum sensors in various modalities. Most applications benefit from shallow NVs, enabling higher sensitivity and resolution. However, near surface NVs ($<$…
Photoluminescent defects in diamond, like the nitrogen-vacancy (NV) color center, are at the forefront of emerging optical quantum technologies. Most emit in the visible and near-infrared spectral region below 1000 nm (NIR-I), limiting…
Point defects in semiconductors offer a promising platform for advancing quantum technologies due to their localized energy states and controllable spin properties. Prior research has focused on a limited set of defects within materials…
The negatively charged nitrogen-vacancy (NV-) center in diamond is an attractive candidate for applications that range from magnetometry to quantum information processing. Here we show that only a fraction of the nitrogen (typically < 0.5…
Negatively charged group-IV defects in diamond show great potential as quantum network nodes due to their efficient spin-photon interface. However, reaching sufficiently long coherence times remains a challenge. In this work, we demonstrate…