Related papers: Control of atomic reconstruction and quasi-1D exci…
The formation of interfacial moir\'e patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer…
Large scale two-dimensional (2D) moir\'e superlattices are driving a revolution in designer quantum materials. The electronic interactions in these superlattices, strongly dependent on the periodicity and symmetry of the moir\'e pattern,…
We investigate the response of excitons in two-dimensional semiconductors subjected to controlled non-uniform strain fields. In our approach to non-uniform strain-engineering, a WS$_2$ monolayer is suspended over a triangular hole. Large…
Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating…
Exciton mobility in two-dimensional semiconductors is a key ingredient in materials-based design of optoelectronic functionalities. Monolayer transition metal dichalcogenides (TMDs) set a good test case, with tightly bound excitons and…
Two-dimensional (2D) materials with a twist between layers exhibit a moir\'e interference pattern with larger periodicity than any of the constituent layer unit cells. In these systems, a wealth of exotic phases appear that result from…
We report deterministic control over moir\'e superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced strain engineering, a widely used technique in industrial…
Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be…
The realization of ordered strain fields in two-dimensional crystals is an intriguing perspective in many respects, including the instauration of novel transport regimes and the achievement of enhanced device performances. In this work, we…
Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the…
Moir\'e superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moir\'e pattern is highly sensitive to the interlayer atomic registry,…
In long-wavelength moir\'e superlattices of stacked transition metal dichalcogenides (TMDs), structural reconstruction ubiquitously occurs, which has reported to impact significantly their electronic properties. However, complete…
Crystalline two-dimensional (2D) semiconductors often combine high elasticity and in-plane strength, making them ideal for strain-induced tuning of electronic characteristics, akin to strategies used in silicon electronics. However,…
We investigate the confinement of neutral excitons in a one-dimensional (1D) potential, engineered by proximizing hBN-encapsulated monolayer MoSe$_2$ to ferroelectric domain walls (DW) in periodically poled LiNbO$_3$. Our device exploits…
The experimental observations of many interaction-driven electronic phases in moir\'e superlattices have stimulated intense theoretical and experimental efforts to understand and engineer these correlated physics. Strain is a powerful tool…
Interlayer excitons (IXs) formed at the interface of atomically-thin semiconductors possess various novel properties. In a parallel development, nanoscale strain engineering has emerged as an effective means for creating 2D quantum light…
Moir\'e effects in twisted or lattice-incommensurate vertical assemblies of two-dimensional crystals give rise to a new class of quantum materials with rich transport and optical phenomena, including correlated electron physics in flat…
When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the…
Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moir\'e superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In…
As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve…