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Optically addressable defect qubits in wide band gap materials are favorable candidates for room temperature quantum information processing. The two-dimensional (2D) hexagonal boron nitride (hBN) is an attractive solid state platform with a…

The presence of oxygen vacancy, as well as ordering of vacancies plays an important role in determining the electronic, ionic and thermal transport properties of many transition metal oxide materials. Controlling the concentration of oxygen…

We report first-principles calculations that reveal the atomic forms, stability, and energy levels of carbon-related defects in SiC (0001)/SiO$_{\rm 2}$ systems. We clarify the stable position (SiC side, SiO$_{\rm 2}$ side, or just at the…

Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integration into nanophotonic resonators. Recently, silicon vacancy…

Vacancy-cluster color centers in lithium fluoride have been studied in detail both theoretically and experimentally for over a century, giving rise to various applications in solid-state lasers, broadband photonic devices, and radiation…

Shallow nitrogen-vacancy (NV) centers in diamond are promising quantum sensors but suffer from noise-induced short coherence times due to bulk and surface impurities. We present interfacial engineering via oxygen termination and graphene…

We discuss the applicability of the pseudopotential-like self-interaction correction (pSIC) to the study of defect energetics and electronic structure of In2O3. Our results predict that substitutional (at oxygen sites) and interstitial (at…

Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…

Multi-crystalline silicon is widely used for producing low-cost and high-efficiency solar cells. During crystal growth and device fabrication, silicon solar cells contain grain boundaries (GBs) which are preferential segregation sites for…

Deep defects in wide band gap semiconductors have emerged as leading qubit candidates for realizing quantum sensing and information applications. Due to the spatial localization of the defect states, these deep defects can be considered as…

Optically active spin defects in wide band-gap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing…

Silicon-based quantum technologies have gained increasing attention due to their potential for large-scale photonic integration, long spin coherence times, and compatibility with CMOS fabrication. Efficient spin-photon interfaces are…

The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication $O$-band,…

The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in…

Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab-initio calculations we determine the nature of…

Diamond optomechanical crystal (OMC) devices with embedded color center spins are promising platforms for a broad range of applications in quantum sensing, networking, and computing applications, offering an interface between a…

The multifaceted physics of oxides is shaped by their composition and the presence of defects, which are often accompanied by the formation of polarons. The simultaneous presence of polarons and defects, and their complex interactions, pose…

Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is…

We present the analysis of five O VI absorbers identified across a redshift path of z $\sim (0.6 - 1.3)$ towards the background quasar PG $1522+101$ with information on five consecutive ionization stages of oxygen from O II to O VI. The…

Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms is crucial to developing these building blocks, but many defect centers are…