Related papers: Self-trapped holes and acceptor impurities in orth…
The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the…
Partial substitution of Fe by Ta in the hole-doped La0.5Sr0.5FeO3 decreases the electric conductivity by up to three orders of magnitude. This decrease is in immediate correlation with a decrease of the electron hole concentration and a…
Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm…
We report the doping high concentration of tetravalent Ge4+ ions (5 mol % for x = 0.05 to 30 mol % for x = 0.30) at the Fe3+ sites of Fe2-xGexO3 system by chemical coprecipitation route. The charge state of Fe and Ge ions has been modified…
In the previous paper, it was shown that holes doped into BaBiO3 self-trap as small polarons and bipolarons. These point defects are energetically favorable partly because they undo locally the strain in the charge-density-wave (Peierls…
Hole-doped LaMnO3 and electron-doped CaMnO3 form self-trapped electronic states. The spectra of these states have been calculated using a two orbital (Mn eg Jahn-Teller) model, from which the non-adiabatic optical conductivity spectra are…
The development of $p$-type oxide semiconductors remains impeded by the inherently low-lying valence-band maximum (VBM) dominated by O-2$p$ states. A prevailing approach to mitigate this limitation is to elevate the VBM by introducing…
We discuss the applicability of the pseudopotential-like self-interaction correction (pSIC) to the study of defect energetics and electronic structure of In2O3. Our results predict that substitutional (at oxygen sites) and interstitial (at…
Superconductivity frequently appears by doping compounds that show a collective phase transition. So far, however, this has not been observed in topological materials. Here we report the discovery of superconductivity induced by Ga doping…
Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were…
We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of…
We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for x from 0 to 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy…
We present a valence transition model for electron- and hole-doped cuprates, within which there occurs a discrete jump in ionicity Cu$^{2+} \to$ Cu$^{1+}$ upon doping, at or near optimal doping in the electron-doped compounds and at the…
We study the homogeneous interacting hole gas in $p$-doped bulk III-V semiconductors. The structure of the valence band is modelled by Luttinger's Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion…
The large error of the DFT+U method on full-filled shell metal oxides is due to the residue of self-energy from the localized d orbitals of cations and p orbitals of the anions. U parameters are self-consistently found to achieve the…
Non-toxic III-V quantum dots (QDs) are plagued with a higher density of performance-limiting trap states than II-VI and IV-VI QDs. Such trap states are generally understood to arise from under-coordinated atoms on the QD surface. Here, we…
We investigate the nature of the electronic ground state and electron-lattice couplings for doped chains of CuO_4 plaquettes or CuO_6 octahedra. The undoped configuration implies here Cu 3d^9 and O 2p^6 formal valence states. The results of…
Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while…
It has been demonstrated in previous experimental and computational work that doping CeO2 with transition metals is an effective way of tuning its properties. However, each previous study on CeO2 doping has been limited to a single or a few…
The present {\em ab initio} study shows that in BaBiO$_3$, Bi$^{3+}$ sites can trap two holes from the valence band to form Bi$^{5+}$ cations. The trapping is accompanied by large local lattice distortions, therefore the composite particle…