Related papers: On-chip integrated light sources with MoS2/WSe2 mo…
We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene…
A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport…
Compact and robust waveguide chips are crucial for new integrated terahertz applications, such as high-speed interconnections between processors and broadband short-range wireless communications. Progress on topological photonic crystals…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with tantalizing layer-dependent electronic and optical properties have emerged as a new paradigm for integrated flat opto-electronic devices. However, daunting challenges remain…
Two-dimensional materials (2DM) and their derived heterostructures have electrical and optical properties that are widely tunable via several approaches, most notably electrostatic gating and interfacial engineering such as twisting. While…
Engineering optical properties, such as luminescence purity and charge transfer, is crucial for harnessing the application potential of atomically thin transition metal dichalcogenides (TMDCs). While electrostatic gating is widely applied…
Graphene photonics has emerged as a promising platform for providing desirable optical functionality. However, graphene's monolayer-scale thickness fundamentally restricts the available light matter interaction, posing a critical design…
The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for realizing high performance opto-electronic devices such as photodetectors and light sources1-3.…
Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable…
The p-n diodes represent the most fundamental device building block for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the inability to selectively dope them…
Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered…
Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V…
Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging…
Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for…
In this letter, we propose hybrid metal-dielectric waveguides coupled to 2D materials that provide strong light-matter interaction at THz frequencies. We investigate the properties of the fundamental propagating modes and show that the…
The layered transition metal dichalcogenides (TMDs) have attracted considerable interest due to their unique electronic and optical properties. Here we report electric field induced strong electroluminescence in multi-layer MoS2 and WSe2.…
Twisted vdW quantum materials have emerged as a rapidly developing field of 2D semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the…
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit…
Atomically layered van der Waals (vdW) materials exhibit remarkable properties, including highly-confined infrared waveguide modes and the capacity for infrared emission in the monolayer limit. Here, we engineered structures that leverage…
Due to its high carrier mobility, broadband absorption, and fast response time, graphene is attractive for optoelectronics and photodetection applications. However, the extraction of photoelectrons in conventional metal-graphene junction…