Related papers: Strain Effects in a Directly Bonded Diamond-on-Ins…

Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapour deposition where the boron concentration exceeds…

Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the…

Materials with strong electronic correlations host remarkable -- and technologically relevant -- phenomena such as magnetism, superconductivity and metal-insulator transitions. Harnessing and controlling these effects is a major challenge,…

The production of negative ions is of significant interest for applications including mass spectrometry, materials surface processing, and neutral beam injection for magnetic confined fusion. Neutral beam injection sources maximise negative…

Large variety of optical full-field measurement techniques are being developed and applied to solve mechanical problems. Since each technique possess its own merits, it is important to know the capabilities and limitations of such…

In newly discovered topological crystalline insulators (TCIs), the unique crystalline protection of the surface state (SS) band structure has led to a series of intriguing predictions of strain generated phenomena, from the appearance of…

The existence of large nonlinear optical coefficients is one of the preconditions for using nonlinear optical materials in nonlinear optical devices. For a crystal, such large coefficients can be achieved by matching photon energies with…

Using a near-field scanning optical microscope capable of quantitative polarimetry, we map the anisotropic strain fields associated with individual submicron defects near the fusion boundaries of SrTiO$_{3}$ bicrystals. Many defects exhibit…

This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data…

The magneto-optic Voigt effect is observed in a synthetic diamond membrane with a substitutional nitrogen defect concentration in the order of 200 ppm and a nitrogen-vacancy defect sub-ensemble generated through neutron irradiation and…

In this work, we propose and evaluate an inexpensive and CMOS-compatible method to locally apply strain on a Si/SiOx substrate. Due to high growth temperatures and different thermal expansion coefficients, a SiN passivation layer exerts a…

The strain effects on the spin-orbit induced splitting of the valence band maximum and conduction band minimum in monolayer MoS2 and the gap in graphene are calculated using first-principles calculations. The dependence of these splittings…

We present results of combined density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations, which show that the Mott insulator LaTiO3 undergoes an insulator-to-metal transition under compressive epitaxial strain of…

Interfacial Dzyaloshinskii-Moriya interaction (DMI) is experimentally investigated in Pt/Co/Pt multilayer films under strain. A strong variation (from 0.1 to 0.8 mJ/m$^2$) of the DMI constant is demonstrated at $\pm 0.1\%$ in-plane uniaxial…

We report on wide-field optically detected magnetic resonance imaging of nitrogen-vacancy centers (NVs) in type IIa polycrystalline diamond. These studies reveal a heterogeneous crystalline environment that produces a varied density of NV…

Diamond materials are central to an increasing range of advanced technological demonstrations, from high power electronics, to nano-scale quantum bio-imaging with unprecedented sensitivity. However, the full exploitation of diamond for…

The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and…

The nitrogen-vacancy center in diamond, owing to its optically addressable and long-lived electronic spin, is an attractive resource for the generation of remote entangled states. However, the center's low native fraction of coherent photon…

Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large…

Charge injection from electrodes into doped organic films is a widespread technology used in the majority of state-of-the-art organic semiconductor devices. Although such interfaces are commonly considered to form Ohmic contacts via strong…