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Related papers: Strain Effects in a Directly Bonded Diamond-on-Ins…

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Creating dense and shallow nitrogen vacancy (NV) ensembles with good spin properties, is a prerequisite for developing diamond-based quantum sensors exhibiting better performance. Ion implantation is a key enabling tool for precisely…

In this paper, we employ an electron beam writer as metrology tool to investigate distortion of an exposed pattern of alignment marks in heterogeneously bonded InP on silicon. After experimental study of three different bonding and…

Applied Physics · Physics 2018-12-04 Aurimas Sakanas , Elizaveta Semenova , Luisa Ottaviano , Jesper Mørk , Kresten Yvind

Silicon nanospheres are high-quality optical resonators and promising building blocks for Mie-tronic devices. While the Mie resonances of an isolated sphere are well understood, practical implementations require substrates that inevitably…

A new two-dimensional material, the C$_2$N holey 2D (C$_2$N-$h$2D) crystal, has recently been synthesized. Here we investigate the strain effects on the properties of this new material by first-principles calculations. We show that the…

Materials Science · Physics 2015-12-10 Shan Guan , Yingchun Cheng , Chang Liu , Junfeng Han , Yunhao Lu , Shengyuan A. Yang , Yugui Yao

We report on the observation of quantum interference of the emission from two separate nitrogen vacancy (NV) centers in diamond. Taking advantage of optically induced spin polarization in combination with polarization filtering, we isolate…

Strain engineering is a promising approach for suppressing the OFF-state conductance in graphene-based devices that arises from Klein tunnelling. In this work, we derive a comprehensive tight-binding Hamiltonian for strained graphene that…

Mesoscale and Nanoscale Physics · Physics 2021-08-25 Maverick Chauwin , Zhuo Bin Siu , Mansoor Bin Abdul Jalil

First-principles calculations, within the framework of density functional theory, have been performed on the well-studied 2H and the less explored 1T$^{\prime}$ phase of single-layer MoS$_{2}$. We have addressed the strain-induced…

Materials Science · Physics 2023-03-01 Saumen Chaudhuri , A. K. Das , G. P. Das , B. N. Dev

Two-dimensional (2D) materials with a twist between layers exhibit a moir\'e interference pattern with larger periodicity than any of the constituent layer unit cells. In these systems, a wealth of exotic phases appear that result from…

Strain is commonly used in metal-oxide-semiconductor technologies to boost on-state performance. This booster has been in production for at least a decade. Despite this, a systematic study of the impact of strain on off-state leakage…

Mesoscale and Nanoscale Physics · Physics 2025-02-03 Felipe Murphy-Armando , Chang Liu , Yi Zhao , Ray Duffy

Background: Full-field, quantitative visualization techniques, such as digital image correlation (DIC), have unlocked vast opportunities for experimental mechanics. However, DIC has traditionally been a surface measurement technique, and…

Applied Physics · Physics 2024-10-24 Barry P Lawlor , Vatsa Gandhi , Guruswami Ravichandran

Many printed electronic applications require strain-independent electrical properties to ensure deformation-independent performance. Thus, developing printed, flexible devices using 2D and other nanomaterials will require an understanding…

Mesoscale and Nanoscale Physics · Physics 2024-10-29 Eoin Caffrey , Tian Carey , Luke Doolan , Anthony Dawson , Emmet Coleman , Zdenek Sofer , Oran Cassidy , Cian Gabbett , Jonathan N. Coleman

In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural…

Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical…

Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are…

Monolayer transition metal dichalcogenides are promising materials for photoelectronic devices. Among them, molybdenum disulphide (MoS$_2$) and tungsten disulphide (WS$_2$) are some of the best candidates due to their favorable band gap…

Materials Science · Physics 2015-06-19 Luqing Wang , Alex Kutana , Boris I. Yakobson

High quality integrated diamond photonic devices have previously been demonstrated in applications from non-linear photonics to on-chip quantum optics. However, the small sample sizes of single crystal material available, and the difficulty…

This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strain in silicon. Structural relaxation of a strained primitive…

Applied Physics · Physics 2023-01-31 Nicolas Roisin , Marie-Stéphane Colla , Jean-Pierre Raskin , Denis Flandre

The vibrational and electronic properties of 2-dimensinal (2D) materials can be efficiently tuned by external strain due to their good stretchability. Resonant Raman spectroscopy is a versatile tool to study the physics of phonons,…

Mesoscale and Nanoscale Physics · Physics 2019-06-05 Chaoyu Song , Fengren Fan , Ningning Xuan , Shenyang Huang , Chong Wang , Guowei Zhang , Fanjie Wang , Qiaoxia Xing , Yuchen Lei , Zhengzong Sun , Hua Wu , Hugen Yan

Ensembles of negatively charged nitrogen vacancy centers (NV-) in diamond have been proposed for sensing of magnetic fields and paramagnetic agents, and as a source of spin-order for the hyperpolarization of nuclei in magnetic resonance…

Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of…

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