Related papers: Intermediate Excited State Relaxation Dynamics of …
Investigations of the polarization and relaxation of $^{209}$Rn by spin exchange with laser optically pumped rubidium are reported. On the order of one million atoms per shot were collected in coated and uncoated glass cells. Gamma-ray…
We investigate, theoretically and numerically, the spin dynamics of a two-component exciton-polariton condensate created and sustained by non-resonant spin-polarized optical pumping of a semiconductor microcavity. Using the open-dissipative…
We have studied the temperature dependencies of the photoluminescence (PL) intensity of 4.1 eV in microcrystalline powder of hexagonal boron nitride in the range of 7-1100 K. The results obtained have been analyzed within the band model of…
A full set of vibrationally-resolved cross sections for electron impact excitation of NO(X2{\Pi}, v) molecules is calculated from ab initio molecular dynamics, in the framework of the local-complex-potential approach. Electron-vibration…
We study the dynamics of multiple coupled states under the influence of an arbitrary time-dependent external field to investigate the femtosecond laser-driven excitation and the spin-orbit mediated dissociation in the NaRb dimer. In this…
A pulsed-gate technique with charge sensing is used to measure the singlet-triplet relaxation time for nearly-degenerate spin states in a two-electron double quantum dot. Transitions from the (1,1) charge occupancy state to the (0,2) state,…
Single photon emitters (SPEs) are promising building blocks for practical devices in quantum technologies. Traditionally, these systems are excited using off-resonant visible light through their phonon transitions, yet this process remains…
Magneto photoluminescence and excitation spectroscopy are used to probe the excited state spectrum of negatively charged trions in a InGaAs quantum dot. A single dot optical charging device allows us to selectively prepare specific few (1e,…
Spin-lattice relaxation within the nitrogen-vacancy (NV) center's electronic ground-state spin triplet limits its coherence times, and thereby impacts its performance in quantum applications. We report measurements of the relaxation rates…
Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n- and p-types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times…
Hexagonal boron nitride (hBN) has emerged as a significant material for quantum sensing, particularly due to its ability to host spin active defects, such as the negatively charged boron vacancy (V$_\mathrm{B}^-$ center). The optical…
Hexagonal boron nitride (hBN) is a wide band gap, van der Waals material that is highly promising for solid-state quantum technologies as a host of optically addressable, paramagnetic spin defects. Intrinsic and extrinsic point defects…
Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with…
We discuss the implications of a small indium content (3%) in a GaAs epilayer on the electron- and nuclear-spin relaxation due to enhanced quadrupolar effects induced by the strain. Using the weakly perturbative spin-noise spectroscopy, we…
Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB) centres, are emerging candidates for quantum sensing. However, the VB defects suffer from low quantum efficiency and as a result exhibit…
Vibrational wavepacket dynamics in the ground (X) and excited (B) electronic states of iodine under impulsive-pump/broadband-probe excitation are revisited. A method for accurate chirp correction, necessary to determine the zero time for…
The emission intensity of diamond samples containing nitrogen-vacancy centres are measured as a function of magnetic field along a <111> direction for various temperatures. At low temperatures the responses are sample and stress dependent…
Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-band single-photon emission and its optically addressable…
Excited-state quantum phase transitions depend on and reveal the structure of the whole spectrum of many-body systems. While they are theoretically well understood, finding suitable signatures and detect them in actual experiments remains…
We investigate the quantum dynamics of the electron spin resonance of topological defects (edge state) in dimerized chains. These objects are discontinuities of the spin chain protected by the properties of the global system leading to a…