Related papers: Simulation of current-driven magnetisation switchi…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
Analog crossbar arrays consisting of emerging memory devices can greatly alleviate the computational strain required by vector matrix multiplications for neural network applications. The ability to produce spin orbit torque-magnetic…
Spin-transfer torque (STT) effects on the stationary forced response of nanoscale ferromagnets subject to thermal fluctuations and driven by an ac magnetic field of arbitrary strength and direction are investigated via a generic nanopillar…
We perform 3D micromagnetic simulations of current-driven magnetization dynamics in nanoscale exchange biased spin-valves that take account of (i) back action of spin-transfer torque on the pinned layer, (ii) non-linear damping and (iii)…
Magnetic thin films with perpendicular magnetic anisotropy (PMA) have localized excitations that correspond to reversed dynamically precessing magnetic moments, known as magnetic droplet solitons. Fundamentally, these excitations are…
Combining spin-orbit (SOT) and spin-transfer torques (STT) provides a practical approach for field-free switching in spin-orbit torque magnetic random-access memory (SOT-MRAM), a prerequisite for industrial deployment, but can compromise…
We study the spectral characteristics of spin current nano-oscillators based on the Pt/[Co/Ni] magnetic multilayer with perpendicular magnetic anisotropy. By varying the applied magnetic field and current, both localized and propagating…
Nanodots with magnetic vortices have many potential applications, such as magnetic memories (VRAMs) and spin transfer nano-oscillators (STNOs). Adding a perpendicular anisotropy term to the magnetic energy of the nanodot it becomes possible…
We propose a two terminal nanomagnetic memory element based on magnetization reversal of a perpendicularly magnetized nanomagnet employing a unipolar voltage pulse that modifies the perpendicular anisotropy of the system. Our work…
The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…
The magnetization dynamics in nanostructures has been extensively studied in the last decades, and nanomagnetism has evolved significantly over that time, discovering new effects, developing numerous applications, and identifying promising…
We present a theoretical and numerical investigation of the role of perpendicular magnetic anisotropy (PMA) in shaping spin-wave (SW) dynamics under low magnetic fields in thin and ultrathin magnetic films. PMA introduces an in-plane torque…
We demonstrate a scalable new ferromagnetic resonance (FMR) technique based on the spin-orbit interaction. An alternating current drives FMR in uniform ferromagnetic structures patterned from the dilute magnetic semiconductors (Ga,Mn)As and…
We investigated the performance of spin transfer torque random access memory (STT-RAM) cell with cross shaped Heusler compound based free layer using micromagnetic simulations. We designed the free layer using Cobalt based Heusler…
It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, to make the switching deterministic, an undesirable magnetic…
We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling…
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…
We present a new type of temperature driven spin reorientation transition (SRT) in thin films. It can occur when the lattice and the shape anisotropy favor different easy directions of the magnetization. Due to different temperature…
Micromagnetic simulation is carried out to investigate the current-driven domain wall (DW) in a nanowire with perpendicular magnetic anisotropy (PMA). A stepped nanowire is proposed to pin DW and achieve high information storage capacity…
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…