Related papers: Giant spin shift current in two-dimensional alterm…
Magnetism in monolayer (ML) VSe2 has attracted broad interest in spintronics while existing reports have not reached consensus. Using element-specific X-ray magnetic circular dichroism, a magnetic transition in ML VSe2 has been demonstrated…
Antiferromagnets that display very small stray magnetic field are ideal for spintronic applications. Of particular interest are non-collinear, chiral antiferromagnets of the type Mn3X (X=Sn, Ge), which display a large magnetotransport…
The recently discovered altermagnets, featured by the exotic correlation of magnetic exchange interaction and alternating crystal environments, have offered exciting cutting-edge opportunities for spintronics. Nevertheless, the…
High tunability of two dimensional magnetic materials (by strain, gating, heterostructuring or otherwise) provides unique conditions for studying versatile magnetic properties and controlling emergent magnetic phases. Expanding the scope of…
Altermagnets, recently identified as a third class of collinear magnetic materials, have attracted significant attention in condensed matter physics. Despite this growing interest, the realization of real Chern insulators in intrinsic…
Materials with large magnetocrystalline anisotropy and strong electric field effects are highly needed to develop new types of memory devices based on electric field control of spin orientations. Instead of using modified transition metal…
Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and…
Altermagnets host chirally split magnons that promise unique functionalities for information processing. However, their distinctive transport signatures, crucial for experimental identification and manipulation, remain elusive. Here, we…
Using \textit{ab initio} methodology, we reveal a strain-mediated approach to precisely tune the magnetoelectric coupling and spin-driven emergent polarization of NiX$_2$ (X = I, Br) monolayers. In the absence of strain, these systems…
Conventional spintronic mechanisms, such as spin-transfer and spin-orbit torques based on the spin current, rely on breaking time-reversal symmetry to manipulate magnetic moments. In contrast, for spatially separated dual spin currents, the…
RuO$_{2}$ has been proposed as the prototypical altermagnetic material. However, several reports have recently questioned its intrinsic magnetic ordering, leading to conflicting findings, especially in thin film heterostructures pointing to…
Altermagnets, a recently discovered class of magnetic materials exhibiting ferromagnetic-like spin-split bands and antiferromagnetic-like compensated magnetic order, have attracted significant interest for next-generation spintronic…
The crystal-symmetry-paired spin-momentum locking (CSML) arisen from the intrinsic crystal symmetry connecting different magnetic sublattices in altermagnets enables many exotic spintronics properties such as unconventional piezomagnetism…
The band structure of a monolayer MoS$_2$ comprises of spin-split subbands, owing to the mutual presence of broken inversion symmetry and strong spin-orbit coupling. In the conduction band, spin-valley coupled subbands cross each other at…
The discovery of atomic monolayer magnetic materials has stimulated intense research activities in the two-dimensional (2D) van der Waals (vdW) materials community. The field is growing rapidly and there has been a large class of 2D vdW…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
Altermagnetism simultaneously possesses nonrelativistic spin responses and zero net magnetization, thus combining advantages of ferromagnetism and antiferromagnetism. This superiority originates from its unique dual feature, i.e.,…
Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we…
Altermagnets offer a unique pathway to functional spintronics by combining vanishing magnetization with large spin splitting. Here, we demonstrate that the canonical d-wave altermagnet KV2Se2O can deliver giant tunneling magnetoresistance…
Altermagnetism presents intriguing possibilities for spintronic devices due to its unique combination of strong spin-splitting and zero net magnetization. However, realizing its full potential hinges on fabricating single-variant…