Related papers: Time-resolved radiative recombination in black sil…
As one of the most important semiconductors, silicon (Si) has been used to fabricate electronic devices, waveguides, detectors, and solar cells etc. However, its indirect bandgap hinders the use of Si for making good emitters1. For…
Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena which…
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this…
Textured silicon surface structures, in particular black silicon (b-Si), open up possibilities for Si-based solar cells and photodetectors to be extremely thin and highly sensitive owing to perfect light-trapping and anti-reflection…
The thickness dependences of the photocurrent quantum yield and photoenergy parameters of silicon backside contact solar cells (BC SC) are investigated theoretically and experimentally. The surface recombination rate on the irradiated…
We present a novel analytical model for analysing the spectral photoluminescence quantum yield of non-planar semiconductor thin films. This model considers the escape probability of luminescence and is applied to triple-cation perovskite…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
Laser machining and modification of black-Si (b-Si) by femtosecond laser Gaussian (G-) and Gauss-Bessel (GB-) beams are compared at a wavelength of 1030 nm. The GB-beam was generated using a diffractive axicon lens and 10x demagnification…
We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We…
Phonon assisted photoluminescence provides a direct window into exciton phonon interactions in low dimensional semiconductors. Using fully ab initio many body perturbation theory, including finite momentum Bethe Salpeter calculations, we…
The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows…
The photorecombination spectrum of 48Ti18+ was measured employing the merged electron-ion beams technique at a heavy-ion storage ring. The experimental electron-ion collision energy range 0-80 eV comprises all dielectronic recombination…
Silicon photonics has attracted significant interest in recent years due to its potential in integrated photonics components (1,2) as well as all-dielectric meta-optics elements.(3) Strong photon-photon interactions, aka optical…
Broadband mid-infrared (mid-IR) spectroscopy applications could greatly benefit from today's well-developed, highly scalable silicon photonics technology; however, this platform lacks broadband transparency due to its reliance on absorptive…
Silicon indirect bandgap fundamentally limits its ability to emit light, hindering the development of silicon-based light sources. Here, we explore a conceptually new solution to this long-standing challenge. We demonstrate ultrabroadband…
Strong photoluminescent emission has been obtained from 3 nm PbS nanocrystals in aqueous colloidal solution, following treatment with CdS precursors. The observed emission can extend across the entire visible spectrum and usually includes a…
Nanowires have unique optical properties [1-4] and are considered as important building blocks for energy harvesting applications such as solar cells. [2, 5-8] However, due to their large surface-to-volume ratios, the recombination of…
We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is…
The ability to amplify light within silicon waveguides is central to the development of high-performance silicon photonic device technologies. To this end, the large optical nonlinearities made possible through stimulated Brillouin…
The inability to efficiently tune the optical properties of waveguiding structures has been one of the major hurdles for the future scalability of integrated photonic systems. In silicon photonics, although dynamic tuning has been achieved…