Related papers: Two-dimensional antiferromagnets with non-relativi…
Magnetoelectric coupling is crucial for uncovering fundamental phenomena and advancing technologies in high-density data storage and energy-efficient devices. The emergence of altermagnets, which unify the advantages of ferromagnets and…
Non-collinear antiferromagnets (nAFMs) with a small net magnetic moment offer new opportunities for ultrafast spintronic devices, owing to unique physical properties. While in ferromagnets and collinear AFMs the spin current polarization is…
Electrical control of spin and magnetic sublattice degrees of freedom is essential for multifunctional and low-power spintronic devices. Bipolar altermagnetic semiconductors (BAMSs)-characterized by opposite spin polarizations at the…
The interplay between electronic transport and antiferromagnetic order has attracted a surge of interest as recent studies have shown that a moderate change in the spin orientation of a collinear antiferromagnet may have a significant…
Hidden spin polarization (HSP) with zero net spin polarization in total but non-zero local spin polarization has been proposed in certain nonmagnetic centrosymmetric compounds, where the individual sectors forming the inversion partners are…
Motivated by possible spintronics applications in antiferromagnets, it was recently observed that symmetry admits magnets that combine attractive features of both ferromagnets and antiferromagnets. These systems, dubbed altermagnets, have…
Antiferromagnets (AFMs) hold promise for applications in digital logic. However, switching AFM domains is challenging, as magnetic fields do not couple to the bulk antiferromagnetic order parameter. Here we show that magnetic-field-driven…
Recent experiments have revealed nonlinear features of the magnetoresistance in metallic bilayers consisting of a heavy-metal (HM) and a ferromagnetic metal (FM). A small change in the lon- gitudinal resistance of the bilayer has been…
The helimagnetic order describes a non-collinear spin texture of antiferromagnets, arising from competing exchange interactions. Although collinear antiferromagnets are elemental building blocks of antiferromagnetic (AFM) spintronics, the…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
Altermagnets are colinear compensated magnets whose magnetic symmetries at zero spin-orbit coupling break spin degeneracy leading to spin-split electronic and magnonic bands that reflect an underlying multipolar order. When there is an…
Noncollinear antiferromagnets (AFMs) have recently attracted attention in the emerging field of antiferromagnetic spintronics because of their various interesting properties. Due to the noncollinear magnetic order, the localized electron…
We propose a realization of an antisymmetric spin-split band structure through magnetic phase transitions without spin-orbit coupling. It enables us to utilize for a variety of magnetic-order-driven cross-correlated and nonreciprocal…
Antiferromagnetic (AFM) materials possess a well-recognized potential for ultrafast data processing thanks to their intrinsic ultrafast spin dynamics, absence of stray fields, and large spin transport effects. The very same properties,…
Ferroelectric altermagnets (FEAMs) offer unique magnetoelectric coupling properties by combining the characteristics of both antiferromagnets and ferromagnets, yet their multifunctional electric control remains largely unexplored. Here, we…
Altermagnetism represents a novel class of collinear antiferromagnetism exhibiting non-relativistic spin splitting without net magnetization, driven by lattice symmetry rather than spin-orbit coupling (SOC). Here, we introduce a…
We propose, for the first time, that an array of diamond plaquettes, each possessing vanishing net magnetization, can achieve complete spin polarization over a broad bias window. Furthermore, this system can be utilized to realize…
Antiferromagnetic (AFM) semiconductor MnS$_2$ possesses both high-spin and low-spin magnetic phases that can be reversibly switched by applying pressure. With increasing pressure, the high-spin state undergoes pressure-induced metalization…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…
We report the direct measurement of antiferromagnetic spin polarization at the oxygen sites in the multiferroic TbMn2O5, through resonant soft x-ray magnetic scattering. This supports recent theoretical models suggesting that the oxygen…