Related papers: Ferroelectric Domains and Evolution Dynamics in Tw…
Light-induced sliding ferroelectricity in two-dimensional van der Waals materials enables polarization control via relative layer motion. However, polarization switching occurs on the time scale of shear modes (tens of ps) and requires very…
The control of ferroelectric domain walls and their dynamics on the nanoscale becomes increasingly important for advanced nanoelectronics and novel computing schemes. One common approach to tackle this challenge is the pinning of walls by…
Charge manipulation and fabrication of stable domain patterns in ferroelectric materials by scanning probe microscopy open up broad avenues for the development of tunable electronics. Harnessing the polarization energy and electrostatic…
Ferroelectrics and ionic conductors are important functional materials, each supporting a plethora of applications in information and energy technology. The underlying physics governing their functional properties is ionic motion, and yet…
Moir\'e superlattices formed by semiconducting transition metal dichalcogenides (TMDs) provide a highly tunable platform for investigating strongly correlated and topological quantum phases. As a prototypical example, twisted bilayer MoTe2…
Domain switching is the cornerstone of ferroelectric materials. Most associated functionalities can be tuned via domain switching, including but not limited to piezoelectricity, thermal conductivity, domain wall conductivity and topological…
Recent advances in moire engineering provide new pathways for manipulating lattice distortions and electronic properties in low-dimensional materials. Here, we demonstrate that twisted stacking can induce dipolar vortices in metallic SrRuO3…
The remarkable advances achieved in two-dimensional materials are now being directly transposed to low-dimensional oxides. Here we show using first-principles-based atomistic simulations that ultrathin freestanding ferroelectric layers host…
With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities…
The outstanding optoelectronic and valleytronic properties of transition metal dichalcogenides (TMDs) have triggered intense research efforts by the scientific community. An alternative to induce long-range ferromagnetism (FM) in TMDs is by…
Monte Carlo simulations of a system consisting of a ferromagnetic layer exchange coupled to a diluted antiferromagnetic layer described by a classical spin model show a strong dependence of the exchange bias on the degree of dilution in…
We show that the electric polarization at the interface with ultrathin superconducting (S) films sandwiched between ferroelectric (FE) layers allows achievement of substantially stronger modulation of inner carrier density and…
Superconducting spintronics in hybrid superconductor/ferromagnet (S-F) heterostructures provides an exciting potential new class of device. The prototypical super-spintronic device is the superconducting spin-valve, where the critical…
Polar metals, materials in which electric polarisation and metallicity coexist, are exceptionally rare because itinerant electrons screen long-range dipoles and favour centrosymmetric structures. Engineering polar textures in a conducting…
Twisted magnetic van der Waals materials provide a flexible platform to engineer new forms of unconventional magnetism. Here we demonstrate the emergence of electrically tunable topological moir\'e magnetism in twisted bilayers of the…
The use of moir\'e patterns to manipulate two-dimensional materials has facilitated new possibilities for controlling material properties. The moir\'e patterns in the two-dimensional magnets can cause peculiar spin texture, as shown by…
Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using…
Using first-principles calculations, we predict that tunable ferroelectricity can be realized in oxide perovskites with the Grenier structure and ordered oxygen vacancies. Specifically, we show that $R_{1/3}A_{2/3}\mathrm{FeO}_{2.67}$…
Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of…
The analytical theory for a ferromagnetic antiferromagnetic bilayer with a compensated interface has been developed using an explicit expression for the interfacial interaction energy density. A stability of a solution describing domain…