Related papers: Ferroelectric Domains and Evolution Dynamics in Tw…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
Two-dimensional sliding ferroelectrics, with their unique stacking degrees of freedom, offer a different approach to manipulate polarization by interlayer sliding. Bending sliding ferroelectrics inevitably leads to interlayer sliding…
Crystal symmetry of two-dimensional (2D) materials plays an important role in their electronic and optical properties. Engineering symmetry in 2D materials has recently emerged as a promising way to achieve novel properties and functions.…
Two-dimensional ferroelectrics with robust polarization offer promising opportunities for non-volatile memory, field-effect transistors, and optoelectronic devices. However, the impact of lattice deformation on polarization and photoinduced…
Polar topological textures like the bubble domains, flux--closures, and labyrinth etc., unlock functional responses in ferroic systems but are difficult to stabilize and control in chemically simple, solution--grown materials. Here we show…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…
Twisted magnetic van der Waals (vdW) materials offer a promising route for multiferroic engineering, yet modeling large-scale moir\'e superlattices remains challenging. Leveraging a newly developed SpinGNN++ framework that effectively…
Fluorite-type $\mathrm{HfO_2}$-based ferroelectric (FE) oxides have rekindled interest in FE memories due to their compatibility with silicon processing and potential for high-density integration. The polarization characteristics of FE…
Polar topological textures in ferroelectrics can host internal structure beyond a single integer topological charge. Here, effective-Hamiltonian molecular-dynamics simulations are used to examine whether such internal fractional topology…
Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the…
Manipulating the interlayer twist angle is a powerful tool to tailor the properties of layered two-dimensional crystals. The twist angle has a determinant impact on these systems' atomistic structure and electronic properties. This includes…
The control of magnetic domain walls is essential for the magnetic-based memory and logic applications. As an elementary excitation of magnetic order, spin wave is capable of moving magnetic domain walls just as the conducting electric…
Topological magnons, quantized spin waves featuring nontrivial boundary modes, present a promising route toward lossless information processing. Realizing practical devices typically requires magnons excited in a controlled manner to enable…
The elastic interaction between kinks (and antikinks) within domain walls plays a pivotal role in shaping the domain structure, and their dynamics. In bulk materials, kinks interact as elastic monopoles, dependent on the distance between…
Artificially induced asymmetric tribological properties of ferroelectrics offer an alternative route to visualize and control ferroelectric domains. Here, we observe the switchable friction and wear behavior of ferroelectrics using a…
Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical…
Controlling the polarization switching in the ferroelectric nanocrystals, nanowires and nanodots has an inherent specificity related to the emergence of depolarization field that is associated with the spontaneous polarization. This field…
Exploring the pathways of polarization switching in 2D sliding ferroelectrics with multiple internal interfaces is crucial for understanding the switching mechanism and for enhancing their performance in memory-related applications.…
Ultra-dense domain walls are increasingly important for many devices but their microscopic properties are so far not fully understood. Here we use molecular dynamic simulations to study the domain wall stability in the prototypical…
We report the first comprehensive investigation of the organic superconductor (TMTSF)2PF6 in the vicinity of the endpoint of the spin density wave - metal phase transition where phase coexistence occurs. At low temperature, the transition…