Related papers: Antiferroelectric switching inside ferroelastic do…
This paper analyzes a peculiar phenomenon of non-reciprocal domain wall pairs and illustrate the implications in ab-initio-based atomistic computational experiments with (112)-oriented planar R180 domain walls within the canonical…
The control of magnetic domain walls is essential for the magnetic-based memory and logic applications. As an elementary excitation of magnetic order, spin wave is capable of moving magnetic domain walls just as the conducting electric…
Electric-polarization reversibility in nano-ferroelectric structures renders them as a convenient platform for exploring phase transitions and developing energy-efficient switching devices. However, the fundamental question of how ferroic…
Surprisingly little is known about the microscopic processes that govern ferroelectric switching in orthorhombic ferroelectrics. To study microscopic switching processes we combine ab initio-based molecular dynamics simulations and data…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…
A wide variety of applications has inspired great interest in designing new materials and investigating fundamental physics in the ferroelectric field. In the concept of ferroelectricity, the spontaneous polarization is traditionally…
Flexoelectricity (coupling between polarization and strain gradients) is a property of all dielectric materials that has been theoretically known for decades, but it is only relatively recently that it has begun to attract experimental…
Many proper and improper ferroelastic materials display (at sufficiently low measurement frequencies) a huge elastic softening below Tc. This giant elastic softening, which can be suppressed with uniaxial stress, is caused by domain wall…
It was recently observed that materials showing most striking multiferroic phenomena are frustrated spin-density-wave magnets. We present a simple phenomenological theory, which describes the orientation of the induced electric polarization…
Ferroelectric switching in BiFeO$_3$ multiferroic thin films with intrinsic ``stripe-like'' and ``bubble-like'' polydomain configurations was studied by piezoresponse force microscopy. Using the local electric field applied by a scanning…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
Lead halide perovskites have emerged as promising materials for optoelectronic applications due to their exceptional properties. In the all-inorganic CsPbBr3 perovskites, ferroelastic domains formed during phase transitions enhance bulk…
In solids, charge polarity can one-to-one correspond to spin polarity phenomenologically, e.g. ferroelectricity/ferromagnetism, antiferroelectricity/antiferromagnetism, and even dipole-vortex/magnetic-vortex, but…
Ferroelectrics are multifunctional smart materials finding applications in sensor technology, micromechanical actuation, digital information storage etc. Their most fundamental property is the ability of polarization switching under applied…
The field-induced polarization reversal in $c$-oriented ferroelectric phase of strained perovskite film has been studied. We show that in additional to the conventional longitudinal switching mechanism, when c-oriented polarization vector…
Fluorite ferroelectrics are exciting candidates for next-generation non-volatile memory devices because their unique ferroelectric mechanism, which arises from unconventional oxygen displacements, permits ferroelectricity with minimal…
Recently, a method of ultrafast polarization switching in ferroelectrics has been suggested. The basic idea of the method is to employ the effect of self-acceleration of polarization dynamics due to a resonator feedback field. This is the…
BiFeO$_3$ is the most famous multiferroic material, but it has no strong spontaneous magnetization due to its antiferromagnetism. Here we show that giant ferroelectric polarization and strong spontaneous magnetization can be both realized…
Interface physics in oxide heterostructures is pivotal in material's science. Domain walls (DWs) in ferroic systems are examples of naturally occurring interfaces, where order parameter of neighboring domains is modified and emerging…
In elastically coupled multiferroic heterostructures that exhibit full domain correlations between ferroelectric and ferromagnetic sub-systems, magnetic domain walls are firmly pinned on top of ferroelectric domain boundaries. In this work…