Related papers: A two-dimensional semiconductor-semimetal drag hyb…
Coulomb drag between two unhybridized graphene sheets separated by a dielectric spacer has recently attracted considerable theoretical interest. We first review, for the sake of completeness, the main analytical results which have been…
Generation of photocurrent via photon drag effect enables very fast light detection with response time limited by momentum relaxation. At the same time, photon drag in bulk uniform samples is small by the virtue of small photon momentum. We…
Electron interactions in and between wires become increasingly complex and important as circuits are scaled to nanometre sizes, or employ reduced-dimensional conductors like carbon nanotubes, nanowires and gated high mobility 2D electron…
Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder…
Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies of collective behavior driven by inter-layer Coulomb coupling. Here we report heterostructures comprising a…
Next-generation electronics calls for new materials beyond silicon for increased functionality, performance, and scaling in integrated circuits. Carbon nanotubes and semiconductor nanowires are at the forefront of these materials, but have…
We theoretically investigate Coulomb drag in a system of two parallel monolayers of graphene. Using a Boltzmann equation approach we study a variety of limits ranging from the non-degenerate interaction dominated limit close to charge…
The application of two-dimensional (2D) semiconductors, such as monolayer MoS2, is limited by the high contact resistance commonly attributed to interfacial barriers at metal contacts. Furthermore, the dependence of electrical conductivity…
We theoretically consider the carrier density tuned (apparent) two-dimensional (2D) metal-insulator-transition (MIT) in semiconductor heterostructure-based 2D carrier systems as arising from a classical percolation phenomenon in the…
We theoretically study the Coulomb drag in graphene when there is a temperature difference between the layers. Within the degenerate limit for equal layer densities, we find that this can lead to significant deviations from the usual…
We study Coulomb drag between the top and bottom surfaces of topological insulator films. We derive a kinetic equation for the thin-film spin density matrix containing the full spin structure of the two-layer system, and analyze the…
We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double…
We study the Coulomb drag between two strange-metal layers using the Einstein-Maxwell-Dilaton model from holography. We show that the low-temperature dependence of the drag resistivity is $\rho_D \propto T^4$, which strongly deviates from…
The advances in the growth techniques provide numerous scope to explore the possibilities of new 2D materials for potential applications. With the aid of first-principle calculations we show that 2D Na can be a new addition to the family of…
Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility ({\mu}) in them as compared with corresponding bulk…
We report experimental data and theoretical analysis of Coulomb drag between two closely positioned graphene monolayers in weak magnetic field. Close enough to the neutrality point, coexistence of electrons and holes in each layer leads to…
Motivated by evidence of local electron-electron attraction in experiments on disordered insulating films, we propose a new two-component Coulomb glass model that combines strong disorder and long-range Coulomb repulsion with the additional…
We study theoretically the relative importance of short-range disorder in determining the low-temperature 2D mobility in GaAs-based structures with respect to Coulomb disorder which is known to be the dominant disorder in semiconductor…
We develop a Boltzmann-Langevin description of Coulomb drag effect in clean double-layer systems with large interlayer separation $d$ as compared to the average interelectron distance $\lambda_F$. Coulomb drag arises from density…
Motivated by very recent studies of Coulomb drag in grahene-BN-graphene system we develop a theory of Coulomb drag for the Fermi liquid regime, for the case when the ratio of spacer thickness $d$ to the Fermi wavelength of electrons is…