Related papers: Efficient solution strategy to couple micromagneti…
We develop a theoretical model of magnon-assisted transport in a mesoscopic tunnel junction between a ferromagnetic metal and a normal (non-magnetic) metal. The current response to a bias voltage is dominated by the contribution of elastic…
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy…
We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using…
For the study of molecular spin junctions, we take into account two types of couplings between the molecule and the metal leads: (i) electron transfer that gives rise to net current in the biased junction and (ii) energy transfer between…
Coherent electronic transport through a molecular device is studied using non-equilibrium Green's function (NEGF) formalism. Such device is made of a carbon nanowire which is connected to ferromagnetic electrodes. The molecule itself is…
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the…
GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization…
Recent theories of spin-current-induced magnetization reversal are formulated in terms of a spin-mixing conductance $G^{mix}$. We evaluate $G^{mix}$ from first-principles for a number of (dis)ordered interfaces between magnetic and…
To design fast memory devices, we need material combinations which can facilitate fast read and write operation. We present a heterostructure comprising a two-dimensional (2D) magnet and a 2D topological insulator (TI) as a viable option…
Recently, multiferroic tunnel junctions (MFTJs) have gained significant spotlight in the literature due to its high tunneling electro-resistance together with its non-volatility. In order to analyze such devices and to have insightful…
We develop a numerically exact scheme for resumming certain classes of Feynman diagrams in the self-consistent perturbation expansion for the electron and magnon self-energies in the nonequilibrium Green function formalism applied to a…
In magnetic memory and logic devices, a magnet's magnetization is usually flipped with a spin polarized current delivering a spin transfer torque (STT). This mode of switching consumes too much energy and considerable energy saving can…
Voltage-driven spin transfer torque in a magnetic tunnel junction comprising magnetic insulating electrodes is studied theoretically. In contrast with the conventional magnetic tunnel junctions comprising transition metal ferromagnets, the…
Here we consider the magnetization dynamics in ferromagnetic nanoparticles or films driven by external magnetic field pulses directed transverse to the initial equilibrium state. The excitation pulse drives large-angle ultra-fast…
We investigate the dependence of perpendicular and parallel spin transfer torque (STT) and tunneling magnetoresistance (TMR) on the insulator barrier energy in the magnetic tunnel junction (MTJ). We employed single orbit tight binding model…
The recent experiment [Y. Wang et al., Science 366, 1125 (2019)] on magnon-mediated spin-transfer torque (MSTT) was interpreted in terms of a picture where magnons are excited within an antiferromagnetic insulator (AFI), by applying…
A mesoscopic description of spin-transfer effect is proposed, based on the spin-injection mechanism occurring at the junction with a ferromagnet. The effect of spin-injection is to modify locally, in the ferromagnetic configuration space,…