Related papers: Transmission Probability in Double Quantum Well wi…
We theoretically investigate the transport properties of cold bosonic atoms in a quasi one-dimensional triple-well potential that consists of two large outer wells, which act as microscopic source and drain reservoirs, and a small inner…
We compute the transmission probability through rectangular potential barriers and p-n junctions in the presence of a magnetic and electric fields in bilayer graphene taking into account contributions from the full four bands of the energy…
In this paper we look at transmission through one-dimensional potential barriers that are piece wise constant. The Transfer Matrix approach is adopted and a new formula is derived for multiplying long matrix sequences that not only leads to…
Klein tunneling and conductance for Dirac fermions in ABC-stacked trilayer graphene (ABC-TLG) through symmetric and asymmetric double potential barriers are investigated using the two and six-band continuum model. Numerical results for our…
The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the…
Slow magnetooscilations of the conductivity are observed in a 75 nm wide quantum well at heating of the two-dimensional electrons by a high-intensity surface acoustic wave. These magnetooscillations are caused by intersubband elastic…
A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with…
The electric conductivity behavior in the single and double tunnel-coupled quantum wells (QW) with different doping profile caused by impact of short pulses of the strong longitudinal (in the quantum wells plane) electric field has been…
We present the concept and the results of pilot measurements of tunneling in a system {Al/$\delta_{Si}$-GaAs} under pressure up to 2 GPa at 4.2 K. The obtained results may indicate the following: the barrier height for {Al/$\delta$-GaAs}…
We report on the study of the electrical current flowing in weakly coupled superlattice (SL) structures under an applied electric field at very low temperature, i.e. in the tunneling regime. This low temperature transport is characterized…
We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly…
Reflectance, transmittance and absorbance of a symmetric light pulse, the carrying frequency of which is close to the frequency of interband transitions in a quantum well, are calculated. Energy levels of the quantum well are assumed…
Two-particle scattering probabilities in tunneling scenarios with exchange interaction are analyzed with quasi-particle wave packets. Two initial one-particle wave packets (with opposite central momentums) are spatially localized at each…
At low temperatures, the transport through a superconducting-normal tunnel interface is due to tunneling of electrons in pairs. The probability for this process is shown to depend on the layout of the electrodes near the tunnel junction,…
The Drude scattering times of electrons in two subbands of a parabolic quantum well have been studied at constant electron sheet density and different positions of the electron distribution along the growth direction. The scattering times…
We have fabricated high-mobility, two-dimensional electron gases in a GaAs quantum well on cylindrical surfaces, which allows to investigate the magnetotransport behavior under varying magnetic fields along the current path. A strong…
We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were able to reduce the carrier density, with respect to…
The gate bias dependency of conductivity is examined in two Si quantum wells with well thickness tw = 7 nm and tw = 14 nm. The conductivity of the thinner device behaves smoothly whereas the thicker device shows strong non-monotonic…
We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide…
Utilizing a novel carbon doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2…