Related papers: Phase selection and texturing in molybdenum oxide …
Highly oriented polycrystalline SSMO thin films deposited on single crystal substrates by ultrasonic nebulized spray pyrolysis have been studied. The film on LAO is under compressive strain while LSAT and STO are under tensile strain. The…
Ferroelectric HfO2 films are usually polycrystalline and contain a mixture of polar and nonpolar phases. This challenges the understanding and control of polar phase stabilization and ferroelectric properties. Several factors such as…
La-based perovskites are a versatile class of materials that are of interest for solid oxide fuel cells and electrocatalytic water splitting. During fabrication of composition spread materials libraries of La-Co-based oxide systems for the…
We have investigated the thermodynamic and kinetic barriers involved in the synthesis of MgB2 films. This work refines our initial conjectures predicting optimal MgB2 thin film growth conditions as a consequence of the unusually large…
A Mn valence instability on La2/3Ca1/3MnO3 thin films, grown on LaAlO3 (001)substrates is observed by x-ray absorption spectroscopy at the Mn L-edge and O K-edge. As-grown samples, in situ annealed at 800 C in oxygen, exhibit a Curie…
Complex oxide functionality, such as ferroelectricity, magnetism or superconductivity is often achieved in epitaxial thin-film geometries. Oxygen vacancies tend to be the dominant type of defect in these materials but a fundamental…
Crystal and domain structures of tensile-strained BiFeO3 films grown on orthorhombic (110)o PrScO3 substrates were investigated. All films possess a MB-type monoclinic structure with 109o stripe domains oriented along the [\=i10]o…
The formation of VO2 crystalline domains in amorphous substoichiometric nanocolumnar VOx thin films subjected to an oxidation process at temperatures below 300{\deg}C has been studied. It is obtained that values of [O]/[V] above 1.9 lead to…
CaFe2O4 is a highly anisotropic antiferromagnet reported to display two spin arrangements with up-up-down-down (phase A) and up-down-up-down (phase B) configurations. The relative stability of these phases is ruled by the competing…
Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics and energy harvesting. Large-area growth methods are needed to open the way to the…
We report on the structural and superconducting properties of nanocrystalline tungsten thin films growth by sputtering at room temperature with an N2:Ar mixture (N2 from 3% to 50%). The crystalline phases were identified by comparing…
The ferroelectricity in $\mathrm{HfO}_2$ thin films is widely attributed to the formation of a polar orthorhombic phase named OIII phase. However, the complexity of OIII phase originated from its low symmetry becomes an obstacle for…
Two-dimensional (2D) transition metal dichalcogenides (TMDCs), exemplified by molybdenum disulfide (MoS2), have shown exceptional potential for data-centred, energy-efficient electronic applications due to their unique electrical,…
Crystal phase is well studied and presents a periodical atom arrangement in three dimensions lattice, but the "amorphous phase" is poorly understood. Here, by starting from cage-like bicyclocalix[2]arene[2]triazines building block, a…
We have investigated the crystal structure and magnetic properties for polycrystalline samples of LaMn1-xFexO3+y, in the whole range x=0.0 to x=1.0, prepared by solid state reaction in air. All samples show the ORT-2 orthorhombic structure…
The discovery of ferroelectric polarization in HfO2-based ultrathin films has spawned a lot of interest due to their potential applications in data storage. Recently, a new R3m rhombohedral phase was proposed to be responsible for the…
Thin films of HfO2 doped with 4% La were fabricated on LSMO/STO (100) substrates using pulsed laser deposition. The stability of the ferroelectric orthorhombic phase in the hafnia films was investigated with respect to varying oxygen…
Computer simulations of (i) a [C12mim][Tf2N] film of nanometric thickness squeezed at kbar pressure by a piecewise parabolic confining potential reveal a mesoscopic in-plane density and composition modulation reminiscent of mesophases seen…
We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show…
Despite the highly porous nature with significantly large surface area, metal organic frameworks (MOFs) can be hardly used in electronic, and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study…