Related papers: Spontaneous in-plane anomalous Hall response obser…
The interplay between magnetism and topological electronic structure offers a large freedom to design strong anomalous Hall effect (AHE) materials. A nodal line from band inversion is a typical band structure to generate strong AHE.…
The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn$_5$Ge$_3$. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect, and calculated…
Here we investigate the temperature dependence of anomalous Hall effect in Hf/GdFeCo/MgO sheet film and Hall bar device. The magnetic compensation temperature ($T_{comp}$) for the sheet film and device is found to be ~240 K and ~118 K,…
Achieving atomically flat and stoichiometric films of chiral antiferromagnets (AFM) with two-dimensional kagome spin lattice structures are crucial for integrating these materials in both established and emerging antiferromagnetic…
For L1(0) FePt films, the anomalous Hall resistivity is found to be proportional to spontaneous magnetization $M_{\mathrm{S}}$. After the $M_{\mathrm{S}}$ temperature effect is eliminated, $\rho_{\mathrm{xyo}}$ can be fitted by…
The intrinsic anomalous Hall conductivity (AHC) in a ferromagnetic metal is completely determined by its band structure. Since the spin orientation direction is an important band-structure tuning parameter, it is highly desirable to study…
The interaction between conduction electrons and localized magnetic moments profoundly influences the electrical and magnetic properties of materials, giving rise to a variety of fascinating physical phenomena and quantum effects. Here, we…
The planar Hall effect (PHE) is the appearance of an in-plane transverse voltage in the presence of coplanar electric and magnetic fields. Its hallmark is a characteristic $\pi$-periodic, i.e. even under a magnetic field reversal, angular…
The anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) are the transverse transport phenomena in magnetic materials, which reflect the Berry curvature arising from the electronic structure near the Fermi level. Lattice strain…
Berry curvature is ubiquitous in condensed matter physics and materials science. Its main consequence is the intrinsic anomalous Hall effect (AHE) in magnetic materials and plays a pivotal role in spintronic applications and quantum…
In quantum matters hosting electron-electron correlation and spin-orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for determining and understanding topological properties. A prominent example…
The transverse current (j_H) due to anomalous Hall effect (AHE) is usually assumed to be perpendicular to the magnetization (m) in ferromagnetic materials, which governs the experiments in spintronics. Generally, this assumption is derived…
In ferromagnets, electric current generally induces transverse Hall voltage in proportion to magnetization (anomalous Hall effect), and it is frequently used for electrical readout of the up and down spin states. While these properties are…
Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet (AFM) with non-coplanar spin structure have a distinct symmetry that…
Antiferromagnetic spin motion at terahertz (THz) frequencies attracts growing interests for fast spintronics, however their smaller responses to external field inhibit device application. Recently the noncollinear antiferromagnet Mn$_3$Sn,…
A single ferromagnetic kagome layer is predicted to realize a Chern insulator with quantized Hall conductance, which upon stacking can become a Weyl-semimetal with large anomalous Hall effect (AHE) and magneto-optical activity. Indeed, in…
The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzzling that the AHE can survive in heavy metal…
Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate…
Recent studies have shown that certain antiferromagnetic (AFM) materials with the same symmetry breaking as ferromagnets can generate sufficiently large ferromagnetic (FM) responses. Here, we report that the new AFM material NbMnAs exhibits…
We present a review of experimental and theoretical studies of the anomalous Hall effect (AHE), focusing on recent developments that have provided a more complete framework for understanding this subtle phenomenon and have, in many…