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The effect of uniaxial tensile stress and the resultant strain on the structural/magnetic transition in the parent compound of the iron arsenide superconductor, BaFe$_2$As$_2$, is characterized by temperature-dependent electrical…

Transition metal dichalcogenide, especially MoS2 has attracted lot of attention recently owing to its tunable visible range band gap and anisotropic electronic and transport properties. Here, we report a comprehensive inelastic light…

Materials Science · Physics 2020-08-26 Deepu Kumar , Birender Singh , Rahul Kumar , Mahesh Kumar , Pradeep Kumar

We demonstrate that the valence energy-loss function of hexagonal boron nitride (hBN) displays a strong anisotropy in shape, excitation energy and dispersion for momentum transfer q parallel or perpendicular to the hBN layers. This is…

Transport through semiconductor nanostructures is a quantum-coherent process. This paper focuses on systems in which the electron's dynamics is ballistic and the transport is dominated by the scattering from structure boundaries. Opposite…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 E. R. Racec , P. N. Racec , U. Wulf

We have conducted a series of scattering experiments at the uranium M4 absorption edge on low-symmetry uranium compounds (U2N3 and U3O8) produced as epitaxial films. At weak and forbidden reflections, we find a resonant signal, independent…

Strongly Correlated Electrons · Physics 2024-10-02 E. Lawrence Bright , E. N. Ovchinnikova , L. M. Harding , D. G. Porter , R. Springell , V. E. Dmitrienko , R. Caciuffo , G. H. Lander

We investigate the anisotropic hybrid plasmon-SO phonon dispersion relations in monolayer and double-layer phosphorene systems located on the polar substrates, such as SiO2, h-BN and Al2O3. We calculate these hybrid modes with using the…

Mesoscale and Nanoscale Physics · Physics 2017-09-06 S. Saberi-Pouya , T. Vazifehshenas , T. Salavati-fard , M. Farmanbar

This work analyzes the electromagnetic energy transfer rate between donor and acceptor quantum emitters close to a graphene-coated wire. We discuss the modification of the energy transfer rate when the emitters are interfaced via surface…

Optics · Physics 2019-10-23 Julieta Olivo , Mauro Cuevas

Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly…

Computational Physics · Physics 2025-08-05 H. F. Feng , Z. Y. Xu , B. Liu , Zhi-Xin Guo

We theoretically study the influence of impurity scattering on the electric and thermal transport of borophane layer, a two-dimensional anisotropic Dirac semi-metal with two tilted and anisotropic Dirac cones. In a systematic framework, we…

Mesoscale and Nanoscale Physics · Physics 2019-06-19 Moslem Zare

We analyze the spectral properties of a resonator coupled to a superconducting single electron transistor (SSET) close to the Josephson quasiparticle resonance. Focussing on the regime where the resonator is driven into a limit-cycle state…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 T. J. Harvey , D. A. Rodrigues , A. D. Armour

We study the energy-level evolution and ground-state cooling of mechanical resonators under a synthetic phononic gauge field. The tunable gauge phase is mediated by the phase difference between the $\mathcal{PT}$- and…

Quantum Physics · Physics 2021-07-07 Cheng Jiang , Yu-Long Liu , Mika A. Sillanpää

Phosphorene, a new elemental two dimensional (2D) material recently isolated by mechanical exfoliation, holds the feature of a direct band gap of around 2.0 eV, overcoming graphene's weaknesses (zero band gap) to realize the potential…

Materials Science · Physics 2016-12-07 Liujiang Zhou , Jin Zhang , Zhiwen Zhuo , Liangzhi Kou , Wei Ma , Bin Shao , Aijun Du , Sheng Meng , Thomas Frauenheim

Both cuprates and iron-based superconductors demonstrate nematicity, defined as the spontaneous breaking of rotational symmetry in electron systems. The nematic state can play a role in the high-transition-temperature superconductivity of…

Black phosphorus has recently emerged as a promising material for high performance electronic and optoelectronic device for its high mobility, tunable mid-infrared bandgap and anisotropic electronic properties. Dynamical evolution of photo…

We consider the effects of anisotropic coherency strain (due to lattice mismatch) on phase separation in intercalation materials, motivated by the high-rate Li-ion battery material \fepo. Using a phase-field model coupled to elastic…

Materials Science · Physics 2012-02-09 Liam G. Stanton , Martin Z. Bazant

We have studied electron scattering by out-of-plane (flexural) phonon modes in doped suspended graphene and its effect on charge transport. In the free-standing case (absence of strain) the flexural branch shows a quadratic dispersion…

Materials Science · Physics 2012-09-14 Héctor Ochoa , Eduardo V. Castro , M. I. Katsnelson , F. Guinea

The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…

A uniaxial strain applied to graphene-like materials moves the Dirac nodes along the boundary of the Brillouin zone. An extreme case is the merging of the Dirac node positions to a single degenerate spectral node which gives rise to a new…

Mesoscale and Nanoscale Physics · Physics 2018-06-11 Phusit Nualpijit , Andreas Sinner , Klaus Ziegler

The difficulty of description of the radiative transfer in disordered photonic crystals arises from the necessity to consider on the equal footing the wave scattering by periodic modulations of the dielectric function and by its random…

Disordered Systems and Neural Networks · Physics 2009-10-16 M. V. Erementchouk , L. I. Deych , H. Noh , H. Cao , A. A. Lisyansky

This work reports the measurement of electron $g$ factor anisotropy ($| \Delta g |$ = $| g_{001} - g_{1 \bar 1 0} |$) for phosphorous donor qubits in strained silicon (sSi = Si/Si$_{1-x}$Ge$_x$) environments. Multi-million-atom…

Mesoscale and Nanoscale Physics · Physics 2018-08-01 M. Usman , H. Huebl , A. R. Stegner , C. D. Hill , M. S. Brandt , L. C. L. Hollenberg
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