Related papers: Effect of disorder and strain on the operation of …
Spontaneous breaking of rotational symmetry and preferential orientation of stripe phases in the quantum Hall regime has attracted considerable experimental and theoretical effort over the last decade. We demonstrate experimentally and…
The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field…
Self-assembled InAs quantum dots (QDs), which have long hole-spin coherence times and are amenable to optical control schemes, have long been explored as building blocks for qubit architectures. One such design consists of vertically…
We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting…
Holes in Ge/SiGe heterostructures are now a leading platform for semiconductor spin qubits, thanks to the high confinement quality, two-dimensional arrays, high tunability, and larger gate structure dimensions. One limiting factor for the…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…
We present a design and modeling of a scalable quantum processor architecture utilizing hole-spin qubits defined in gate-controlled germanium (Ge) quantum dots, where coherent spin-phonon coupling is predicted to facilitate qubit…
Hole spin qubits in planar germanium heterostructures are frontrunners for scalable semiconductor quantum computing. However, their current performance is mostly limited by large dot-to-dot variability that leads to uncontrolled qubit…
Hole spin qubits in planar Ge heterostructures are one of the frontrunner platforms for scalable quantum computers. In these systems, the spin-orbit interactions permit efficient all-electric qubit control. We propose a minimal design…
Spin qubits based on Si and Si$_{1-x}$Ge$_{x}$ quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities.…
Spin manipulation by hopping has recently emerged as a promising strategy to control hole spins in quantum dots using exclusively baseband control, thereby mitigating power dissipation and high-frequency management constraints in…
Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
Planar germanium heterostructures are promising hosts for hybrid quantum devices due to their compatibility with superconductors, low material disorder, and relaxed fabrication constraints. Also, the potentially low density of nuclear spins…
We introduce a neural-network-based machine learning method to predict the effective spin-orbit coupling (SOC) strength in hole quantum dot arrays from standard charge stability diagrams. Specifically, we study a $2\times 2$ Ge hole quantum…
This work investigates and compares the impact of strain on heavy hole (HH) spin qubits in SiGe/Ge and light hole (LH) spin qubits in GeSn/Ge heterostructures, focusing on energy states, g-factor, Rabi frequency, spin relaxation, and…
The squeezing of a Ge planar quantum dot enhances the Rabi frequency of electric dipole spin resonance by several orders of magnitude due to a strong Direct Rashba spin-orbit interaction in such geometries (Bosco et al 2021 Phys. Rev. B 104…
The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy (E$_g$) accompanied with a large increase in the spin-orbit splitting energy ($\bigtriangleup_{SO}$), leading to the condition that…
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and electrical spin control. However, spin-orbit coupling not…
Quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon in condensed matter physics. Until now, the only experimental realization of the QAHE has been observed for Cr/V-doped (Bi,Sb)$_2$Te$_3$ but at extremely low…