Related papers: Stark Shift from Quantum Defects in Hexagonal Boro…
Deterministic creation of quantum emitters with high single-photon-purity and excellent indistinguishability is essential for practical applications in quantum information science. Many successful attempts have been carried out in hexagonal…
Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation…
Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB) centres, are emerging candidates for quantum sensing. However, the VB defects suffer from low quantum efficiency and as a result exhibit…
Hexagonal boron nitride (h-BN) is an attractive van der Waals material for studying fluorescent defects due to its large bandgap. In this work, we demonstrate enhanced pink color due to neutron irradiation and perform electron paramagnetic…
Color centered-based single photon emitters in hexagonal boron nitride (h-BN) have shown promising photophysical properties as sources for quantum light emission. Despite significant advances towards such a goal, achieving lifetime-limited…
Two dimensional materials are becoming increasingly popular as a platform for studies of quantum phenomena and for the production of prototype quantum technologies. Quantum emitters in 2D materials can host two level systems that can act as…
Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk…
Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport…
The $V_N N_B$ defect in hexagonal boron nitride (h-BN), comprising a nitrogen vacancy adjacent to a nitrogen-for-boron substitution, is modelled in regard to its possible usefulness in a nanophotonics device. The modelling is done on both a…
Defect states in 2D materials present many possible uses but both experimental and computational characterization of their spectroscopic properties is difficult. We provide and compare results from 13 DFT and ab initio computational methods…
Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a…
Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional platform for quantum sensing, due to its optically addressable spin defects, such as the negatively charged boron vacancy ($V_{\text{B}}^-$). Despite hBN being…
Single photon emitters in hexagonal boron nitride have been extensively studied recently. Although unambiguous identification of the emitters is still under intense research, carbon related defects are believed to play a vital role for the…
We report a strikingly new physical phenomenon that mirror symmetry breaking in undulated two-dimensional (2D) materials induces a colossal Stark shift in defect emissions, occurring without external electric field F, termed anomalous Stark…
Room-temperature optically active solid-state spin defects are widely known to be useful in quantum sensing applications, however, only a select range of materials have been found to host such systems. Recent measurements in the van der…
Artificial atomic systems in solids such as single photon emitters are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Here, we report on a controllable way to…
Single photon emitters in hexagonal boron nitride are based on fluorescent point-like defects. These defects typically have exceptional photophysical properties and therefore been the focus of extensive research due to their potential to…
Controlling and manipulating individual quantum systems in solids underpins the growing interest in development of scalable quantum technologies. Recently, hexagonal boron nitride has garnered significant attention in quantum photonic…
Defect-based single-photon emitters (SPEs) in hexagonal boron nitride (h-BN) are promising platforms for integrated quantum photonics; however, the absence of identified emitters operating at telecom wavelengths remains a critical…
Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a promising 2D-source of single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters…