Related papers: Modeling Filamentary Conduction in Reset Phase Cha…

Resistive switching devices based on transition metal oxides require formation of a conductive filament in order for the device to be able to switch. Such filaments have been proposed to form by the reduction of the oxide due to application…

Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…

Transport properties of the charge ordering compound $\beta-$Na$_{0.33}$V$_2$O$_5$ are studied in the temperature range from 30 K to 300 K using current driven DC conductivity experiments. It is found that below the metal-insulator…

The filamentation instability of counterpropagating symmetric beams of electrons is examined with 1D and 2D particle-in-cell (PIC) simulations, which are oriented orthogonally to the beam velocity vector. The beams are uniform, warm and…

We study the intrinsic transport properties of suspended graphene devices at high fields (>1 V/um) and high temperatures (>1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6x10^7 cm/s (1.7x10^7 cm/s), and peak…

We have investigated the systematic transport properties of the layered 112-type cobaltite LaBaCo2O5.5 by means of electrical resistivity, magnetoresistance, electroresistance and thermoelectric measurements in various conditions. In order…

We investigate the electronic structure of FeTe(0.6)Se(0.4) employing high resolution photoemission spectroscopy and ab initio band structure calculations. Fe 2p core level and the valence band spectra exhibit signature of strong electron…

The formation of metallic nanofilaments bridging two electrodes across an insulator is a mechanism for resistive switching. Examples of such phenomena include atomic synapses, which constitute a distinct class of memristive devices whose…

We report a comprehensive study on the electronic transport properties of SrZn2Ge2 single crystals. The electrical resistivity of the compound exhibits metallic behavior, following a T^2 dependence below 35 K, consistent with the Fermi…

The equilibrium ON and OFF states of resistive random access memory (RRAM) are due to formation and destruction of a conducting filament. The laws of thermodynamics dictate that these states correspond to the minimum of free energy. Here,…

Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for…

A summary of recent results on filamentary transport, mostly obtained in the ASDEX-Upgrade tokamak (AUG), is presented and discussed in an attempt to produce a coherent picture of SOL filamentary transport: A clear correlation is found…

We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's Function formalism. Realistic device structures with an…

We found that the current-voltage characteristics of the single-layer graphene field-effect transistors exhibit an intriguing feature - an abrupt change of the current near zero gate bias at elevated temperatures T > 500 K. The strength of…

Filamentary resistive switching devices are not only considered as promising building blocks for brain-inspired computing architectures, but they also realize an unprecedented operation regime, where the active device volume reaches truly…

Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the…

We present a theory of second phase conductive filaments in phase transformable systems; applications include threshold switches, phase change memory, and shunting in thin film structures. We show that the average filament parameters can be…

We measure power dissipation in phase change memory (PCM) devices by scanning Joule ex-pansion microscopy (SJEM) with ~50 nm spatial and 0.2 K temperature resolution. The temperature rise in the Ge2Sb2Te5 (GST) is dominated by Joule…

Electronic transport and magnetic properties of Ge1-xMnx/Ge(100) films are investigated as a function of Mn dilution. Depending on x, characteristic temperatures separate different regimes in both properties. Resistivity exhibits an…

Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic…