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Single crystals of AlFe$_{2}$B$_{2}$ have been grown using the self flux growth method and then measured the structural properties, temperature and field dependent magnetization, and temperature dependent electrical resistivity at ambient…
Developing novel high-temperature van der Waals ferromagnetic semiconductor materials and investigating their interface coupling effects with two-dimensional topological semimetals are pivotal for advancing next-generation spintronic and…
We study the anomalous Hall-like effect (AHLE) and the effective anisotropic magnetoresistance (EAMR) in antiferromagnetic {\gamma} -IrMn3/Y3Fe5O12(YIG) and Pt/YIG heterostructures. For {\gamma} -IrMn3/YIG, the EAMR and the AHLE resistivity…
We have investigated the effect of doping by Te on the anomalous Hall effect in Ga1-xMnxAs (x = 0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in…
Thermoelectrics (TEs) are solid-state devices that can realize heat-electricity conversion. Transverse TEs require materials with a large Nernst effect, which typically requires a strong applied magnetic field. However, topological…
The non-stoichiometric Fe$_2$P-type (FeMnP$_{0.5}$Si$_{0.5}$)$_{1-x}$(FeV)$_{x}$ alloys ( $x=0, 0.01$, $0.02$, and $0.03$) have been investigated as potential candidates for magnetic refrigeration near room temperature. The magnetic…
Magnetic behavior of the pseudo-binary alloy $Hf_{1-x}Ta_xFe_2$ has been studied, for which the zero field ferromagnetic (FM) to antiferromagnetic (AFM) transition temperature is tuned near to T=0 K. These alloys show anomalous…
The metamagnetic transition between the antiferromagnetic and paramagnetic state in UIrGe has been studied at various temperatures by magnetization, heat capacity and magnetocaloric-effect measurements on a single crystal in static and…
We report on systematic temperature- and magnetic field-dependent studies of the EuGa$_4$ binary compound, which crystallizes in a centrosymmetric tetragonal BaAl$_4$-type structure with space group $I4/mmm$. The electronic properties of…
We report our discovery of a temperature independent anomalous Hall effect (AHE) from 15 mK to 300 K temperature occurring in a 68 nm thick transport device made out of pure bismuth. This surprising behaviour is accompanied with an expected…
The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can in principle be…
The measurements of the magnetic susceptibility, magnetization, electrical resistivity and magnetoresistance have been performed for the Fe intercalated compound Fe0.5TiS2. According to X-ray diffraction measurements the Fe0.5TiS2 compound…
Magnetic topological insulators provide a unique platform to explore the interplay between magnetism and topology. MnBi$_2$Te$_4$, known for its A-type antiferromagnetic (AFM) ground state, undergoes a striking transformation when single…
Van der Waals magnetic materials are building blocks for novel kinds of spintronic devices and playgrounds for exploring collective magnetic phenomena down to the two-dimensional limit. Chromium-tellurium compounds are relevant in this…
We present magnetoresistivity measurements on the heavy-fermion superconductor UTe$_{2}$ in pulsed magnetic fields $\mu_0H$ up to 68~T and temperatures $T$ from 1.4 to 80~K. Magnetic fields applied along the three crystallographic…
The interplay between linearly dispersing or Dirac-like, and flat electronic bands, for instance, in the kagome ferromagnets, has attracted attention due to a possible interplay between topology and electronic correlations. Here, we report…
The topological Hall effect (THE) is one of the key signatures of topologically non-trivial magnetic spin textures, wherein electrons feel an additional transverse voltage to the applied current. The magnitude of THE is often small compared…
The quantum anomalous Hall effect (QAHE) has been recently demonstrated in Cr- and V-doped three-dimensional topological insulators (TIs) at temperatures below 100 mK. In those materials, the spins of unfilled d-electrons in the transition…
We show that suitably-designed magnetic semiconductor heterostructures consisting of Mn delta-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of magnetic moments of Mn atoms are controllably overlapped with the…
We report room temperature giant baro-resistance ($\approx$128\%) in $Fe_{49}(Rh_{0.93}Pd_{0.07})_{51}$. With the application of external pressure and magnetic field the temperature range of giant baro-resistance ($\approx$600\% at 5K and…